hyb18t512161bf-33 Infineon Technologies Corporation, hyb18t512161bf-33 Datasheet - Page 88

• Manufacturer Part Number: hyb18t512161bf-33
• Description: 512-mbit X16 Gddr2 Dram
• Manufacturer: Infineon Technologies Corporation

6.1.1
The ODT function adds additional current consumption to the DDR2 SDRAM when enabled by the EMRS(1).
Depending on address bits A6 & A2 in the EMRS(1) a “weak” or “strong” termination can be selected. The current
consumption for any terminated input pin depends on whether the input pin is in tri-state or driving “0” or “1”, as
long a ODT is enabled during a given period of time.. See
Table 43
ODT Current
Enabled ODT current per DQadded I
current for ODT enabled;
ODT is HIGH; Data Bus inputs are floating
Active ODT current per DQadded I
for ODT enabled;
ODT is HIGH; worst case of Data Bus inputs are
stable or switching.
Note: For power consumption calculations the ODT duty cycle has to be taken into account
Data Sheet
On Die Termination (ODT) Current
ODT current per terminated input pin
DDQ
DDQ
current
I
I
ODTO
ODTT
88
Table 43
EMRS(1) State
A6 = 0, A2 = 1
A6 = 1, A2 = 0
A6 = 1, A2 = 1
A6 = 0, A2 = 1
A6 = 1, A2 = 0
A6 = 1, A2 = 1
512-Mbit Double-Data-Rate-Two SDRAM
HYB18T512161BF–22/25/28/33
Min.
5
2.5
7.5
10
5
15
Specifications and Conditions
Typ.
6
3
9
12
6
18
05102005-C5U8-7TLE
Max.
7.5
3.75
11.25
15
7.5
22.5
Rev. 1.1, 2005-08
Unit
mA/DQ
mA/DQ
mA/DQ
mA/DQ
mA/DQ
mA/DQ