m58wr032ft STMicroelectronics, m58wr032ft Datasheet

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m58wr032ft

Manufacturer Part Number
m58wr032ft
Description
32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet
FEATURES SUMMARY
November 2004
SUPPLY VOLTAGE
SYNCHRONOUS / ASYNCHRONOUS READ
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
MEMORY BLOCKS
DUAL OPERATIONS
BLOCK LOCKING
SECURITY
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
V
Read
V
V
Synchronous Burst Read mode: 66MHz
Asynchronous/ Synchronous Page Read
mode
Random Access: 60ns, 70ns, 80ns
8µs by Word typical for Fast Factory
Program
Double/Quadruple Word Program option
Enhanced Factory Program options
Multiple Bank Memory Array: 4 Mbit
Banks
Parameter Blocks (Top or Bottom
location)
Program Erase in one Bank while Read in
others
No delay between Read and Write
operations
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down
128 bit user programmable OTP cells
64 bit unique device number
DD
DDQ
PP
= 12V for fast Program (optional)
= 1.7V to 2V for Program, Erase and
= 1.7V to 2.24V for I/O Buffers
32 Mbit (2Mb x16, Multiple Bank, Burst)
Figure 1. Package
ELECTRONIC SIGNATURE
PACKAGE
1.8V Supply Flash Memory
Manufacturer Code: 20h
Device Codes:
M58WR032FT (Top): 8814h
M58WR032FB (Bottom): 8815h
Compliant with Lead-Free Soldering
Processes
Lead-Free Versions
VFBGA56 (ZB)
7.7 x 9 mm
M58WR032FB
M58WR032FT
FBGA
1/86

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