tza3026 NXP Semiconductors, tza3026 Datasheet - Page 12

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tza3026

Manufacturer Part Number
tza3026
Description
Tza3026 Sdh/sonet Stm4/oc12 Transimpedance Amplifier
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
12. Bare die information
13. Package outline
9397 750 14763
Product data sheet
Table 5:
Not applicable.
Parameter
Glass passivation
Bonding pad
dimension
Metallization
Thickness
Die dimension
Backing
Attach temperature
Attach time
Fig 10. Bonding pad locations
Origin is center of die.
Physical characteristics of the bare die
1
2
3
Value
0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride
minimum dimension of exposed metallization is 90 m
(pad size = 100 m
metallization of 80 m
2.8 m AlCu
380 m nominal
820 m
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attach is glue
<15 s
Rev. 01 — 2 May 2005
17
4
1300 m ( 20 m
16
5
SDH/SONET STM4/OC12 transimpedance amplifier
15
6
100 m) except pads 2 and 3 which have exposed
80 m (pad size = 90 m
(0,0)
Y
14
2
7
)
X
13
8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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9
001aac627
11
10
90 m)
TZA3026
90 m
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