el7532 Intersil Corporation, el7532 Datasheet - Page 2

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el7532

Manufacturer Part Number
el7532
Description
Monolithic 2a Step-down Regulator
Manufacturer
Intersil Corporation
Datasheet

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Absolute Maximum Ratings
V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V
RSI, EN, V
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4A
ESD Classification
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTE:
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T
Electrical Specifications
NOTE:
DC CHARACTERISTICS
V
I
V
V
V
I
R
R
T
T
I
V
V
V
V
V
V
AC CHARACTERISTICS
F
t
t
t
1. θ
2. Not production tested.
IN
FB
DD
EN
RSI
SS
POR
PARAMETER
Human Body Model (Per JESD22-A114-B) . . . . . . . . . . . . Class 2
OT,OFF
OT,ON
PWM
FB
IN
IN,OFF
IN,ON
DS(ON)-PMOS
DS(ON)-NMOS
EN1
EN2
POR
OLPOR
LINEREG
LOADREG
, V
, I
, V
JA
RSI
DD
, V
, V
DD
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
RSI1
RSI2
, POR to SGND . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
O
, FB to SGND . . . . . . . . . . . . . . . -0.3V to (V
Feedback Input Voltage
Feedback Input Current
Input Voltage
Minimum Voltage for Shut-down
Maximum Voltage for Start-up
Supply Current
PMOS FET Resistance
NMOS FET Resistance
Over-temperature Threshold (Note 2)
Over-temperature Hysteresis (Note 2)
EN, RSI Current
EN, RSI Rising Threshold
EN, RSI Falling Threshold
Minimum V
V
POR Voltage Drop
Line Regulation (Note 2)
Load Regulation (Note 2)
PWM Switching Frequency
Minimum RSI Pulse Width (Note 2)
Soft-start Time (Note 2)
Power On Reset Delay Time (Note 2)
FB
Value
FB
DESCRIPTION
for POR, WRT Targeted
2
V
DD
(T
A
= V
= +25°C)
IN
= V
EN
= 3.3V, C1 = C2 = 10µF, L = 1.8µH, V
J
= T
IN
IN
C
+ +0.3V)
+ +0.3V)
= T
V
V
PWM, V
EN = 0, V
V
V
T rising
T falling
V
V
V
V
V
I
V
V
SINK
IN
IN
DD
DD
EN
DD
DD
FB
FB
IN
IN
A
falling
rising
= 2.5V to 6V, I
= 3.3V, V
, V
rising
falling
= 5V, wafer test only
= 5V, wafer test only
= 3.3V
= 3.3V
EL7532
= 5mA
RSI
IN
IN
= V
= 0V and 3.3V
= V
OUT
DD
CONDITIONS
DD
Thermal Information
Thermal Resistance (Typical)
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
= 5V
= 1.8V, I
OUT
MSOP10 Package (Note 1) . . . . . . . . . . . . . . . . . . .
= 5V
= 2A, V
OUT
O
OUT
= 0 to 2A
= 1.8V, unless otherwise specified.
= 1.8V
1.35
MIN
790
2.5
2.2
0.8
80
86
-1
2
TYP
800
400
145
130
650
100
0.1
0.1
0.5
1.5
52
35
35
25
MAX
1.65
810
250
500
120
5.5
2.2
2.4
2.4
80
65
95
70
50
1
1
November 2, 2007
θ
JA
115
FN7435.8
UNIT
(°C/W)
MHz
%/V
mV
mV
ms
nA
µA
µA
°C
°C
µA
ns
µs
%
%
%
V
V
V
V
V

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