74ALVC16374DTR ON Semiconductor, 74ALVC16374DTR Datasheet - Page 3

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74ALVC16374DTR

Manufacturer Part Number
74ALVC16374DTR
Description
IC FLIP-FLOP 16BIT DTYPE 48TSSOP
Manufacturer
ON Semiconductor
Series
74ALVCr
Type
D-Type Busr
Datasheet

Specifications of 74ALVC16374DTR

Function
Standard
Output Type
Tri-State Non Inverted
Number Of Elements
2
Number Of Bits Per Element
8
Frequency - Clock
250MHz
Delay Time - Propagation
1.1ns
Trigger Type
Positive Edge
Current - Output High, Low
24mA, 24mA
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
48-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
74ALVC16374DTROS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
7. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
RECOMMENDED OPERATING CONDITIONS
MAXIMUM RATINGS
V
V
V
I
I
I
I
I
T
T
T
q
MSL
F
V
I
Symbol
LATCH−UP
Symbol
IK
OK
O
CC
GND
V
V
V
T
Dt/DV
JA
STG
L
J
R
CC
I
O
ESD
A
CC
I
O
O
absolute maximum rating must be observed.
Supply Voltage
Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate, V
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink/Source Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 2)
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latch−Up Performance
(Note 1)
Parameter
IN
Parameter
Above V
from 0.8 V to 2.0 V, V
http://onsemi.com
CC
and Below GND at 125°C (Note 6)
Charged Device Model (Note 5)
Human Body Model (Note 3)
3
Oxygen Index: 30% − 35%
Data Retention Only
V
Machine Model (Note 4)
CC
CC
= 2.5 V ±0.2 V
= 3.0 V ±0.3 V
(Active State)
Operating
(3−State)
(Note 7)
V
V
O
I
< GND
< GND
1.65
−0.5
Min
−40
1.2
0
0
0
0
UL−94−VO (0.125 in)
*0.5 to )4.6
*0.5 to )4.6
*0.5 to )4.6
*65 to )150
Typ
3.3
3.3
Level 1
u2000
Value
$100
$100
)150
u200
$250
*50
*50
$50
N/A
260
90
Max
V
+85
3.6
3.6
3.6
3.6
20
10
CC
°C/W
Unit
mA
mA
mA
mA
mA
mA
ns/V
°C
°C
°C
Unit
V
V
V
V
°C
V
V
V

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