ca309604 Intersil Corporation, ca309604 Datasheet - Page 2

• Manufacturer Part Number: ca309604
• Description: Npn/pnp Transistor Arrays
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Collector-to-Emitter Voltage, V
Collector-to-Base Voltage, V
Collector-to-Substrate Voltage, V
Emitter-to-Substrate Voltage, V
Emitter-to-Base Voltage, V
Collector Current, I
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (Terminal 16) must be
2. θ
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
DC CHARACTERISTICS FOR EACH NPN TRANSISTOR
I
I
V
V
V
V
V
V
V
h
|∆V
DC CHARACTERISTICS FOR EACH PNP TRANSISTOR
I
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 35V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . -
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . 6V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
CBO
CEO
CBO
FE
(BR)CEO
(BR)CBO
(BR)CIO
(BR)EBO
Z
CE SAT
BE
PARAMETER
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action.
resistances to calculate the junction temperature.
BE
JA
(Note 4)
(Note 4)
/∆T| (Note 4)
is measured with the component mounted on an evaluation PC board in free air.
C
(All Types). . . . . . . . . . . . 50mA
V
I
V
I
I
0
I
I
I
I
I
I
I
l
I
I
V
I
V
V
I
C
CONDITIONS
E
B
C
C
E
CI
B
E
C
Z
B
C
C
E
CB
CE
CE
CE
CB
EBO
= I
= 10µA
= 0
= 0
= 1mA, I
= 0
= 10µA,
= 10mA,
= 1mA
= 0
= 10µA,
= 0
= 1mA,
= 1mA,
= 10µA,
CBO
TEST
E
= 10V,
= 10V,
= 5V
= 5V
= -10V,
CEO
EIO
= 0
CIO
For Equipment Design, At T
B
(Note 1)
=
MIN
150
0.6
35
45
45
6
6
-
-
-
-
-
CA3096, CA3096A, CA3096C
NPN
CA3096
0.001
0.006
-0.06
TYP
0.24
0.69
100
100
390
7.9
1.9
50
o
8
C to 125
-10mA
PNP
-40V
-24V
-40V
-24V
-40V
-24V
-40V
-24V
-
-
MAX
1000
A
0.78
-100
100
500
9.8
0.7
o
-
-
-
-
-
= 25
C
2
o
C
Operating Conditions
Thermal Information
Thermal Resistance (Typical, Note 2)
Maximum Power Dissipation (Each Transistor, Note 3) . . . . . 200mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
Maximum Storage Temperature Range . . . . . . . . . .-65
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300
MIN
150
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(SOIC - Lead Tips Only)
0.6
35
45
45
6
6
-
-
-
-
-
CA3096A
-0.006
0.001
0.006
TYP
0.24
0.69
100
100
390
7.9
1.9
50
8
MAX
0.78
100
500
-40
9.8
0.5
40
-
-
-
-
-
MIN
100
0.6
24
30
30
6
6
-
-
-
-
-
CA3096C
0.001
0.006
TYP
0.24
0.69
-0.06
390
7.9
1.9
80
80
35
8
MAX
1000
-100
0.78
100
670
9.8
0.7
-
-
-
-
-
o
θ
C to 150
JA
UNITS
mV/
110
120
(
o
nA
nA
nA
V
V
V
V
V
V
V
C/W)
o
C
o
o
o
C
C
C