ald110900a Advanced Linear Devices Inc (ALD), ald110900a Datasheet

ald110900a

Manufacturer Part Number

ald110900a

Description

Quad/dual N-channel Zero Threshold Epad Matched Pair Moset Array

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD110900A.pdf (2 pages)

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GENERAL DESCRIPTION

ALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic

quad/dual N-Channel MOSFETs matched at the factory using ALD’s

proven EPAD ® CMOS technology. These devices are intended for low

voltage, small signal applications. The ALD110800/ALD110900 features

zero threshold voltage, which reduces or eliminates input to output

voltage level shift, including circuits where the signal is referenced to

GND or V+. This feature greatly reduces output signal voltage level

shift and enhances signal operating range, especially for very low

operating voltage environments. With these zero threshold devices an

analog circuit with multiple stages can be constructed to operate at

extremely low supply or bias voltage levels. As an example, an input

amplifier stage operating at 0.2V supply voltage has been demonstrated.

ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair

MOSFETs are designed for exceptional device electrical characteris-

tics matching. As these devices are on the same monolithic chip, they

also exhibit excellent tempco tracking characteristics. They are

versatile as design components for a broad range of analog applica-

tions such as basic building blocks for current sources, differential

amplifier input stages, transmission gates, and multiplexer applications.

Besides matched pair electrical characteristics, each individual

MOSFET also exhibits well controlled parameters, enabling the user

to depend on tight design limits. Even units from different batches

and different date of manufacture have correspondingly well matched

characteristics.

These devices are built for minimum offset voltage and differential

thermal response, and they are designed for switching and amplifying

applications in +0.2V to +10V systems where low input bias current,

low input capacitance and fast switching speed are desired. The V

of these devices are set at +0.0V, which classify them as both enhance-

ment mode and depletion mode devices. When the gate is set at 0.0V,

the drain current = +1µA @ V

with output voltage level biased at or near input voltage level without

voltage level shift. These devices exhibit same well controlled turn-off

and sub-threshold characteristics as standard enhancement mode

MOSFETs.

The ALD110800A/ALD110800/ALD110900A/ALD110900 are MOSFET

devices that feature high input impedance (10

gain (>10

current of 3mA and input leakage current of 30pA at 25°C is = 3mA/

30pA = 100,000,000. For most applications, connect V+ pin to the most

positive voltage potential (or left open unused) and V- and N/C pins to

the most negative voltage potential in the system. All other pins must

have voltages within these voltage limits.

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

ALD110800APC ALD110800ASC ALD110900APA ALD110900ASA

ALD110800PC

16-Pin

Plastic Dip

Package

0°C to +70°C

). A sample calculation of the DC current gain at a drain

INEAR

DVANCED

EVICES,

ALD110800SC

Operating Temperature Range*

16-Pin

SOIC

Package

NC.

QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD

=1+0.1V, which allow a class of circuits

ALD110900PA

Plastic Dip

Package

8-Pin

0°C to +70°C

MATCHED PAIR MOSFET ARRAY

) and high DC current

ALD110900SA

SOIC

Package

8-Pin

www.aldinc.com

GS(th)

ALD110800/ALD110800A/ALD110900/ALD110900A

FEATURES

• Precision zero threshold voltage mode

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• V

• Positive, zero, and negative V

• Low input capacitance

• Low input/output leakage currents

APPLICATIONS

• Very low voltage analog and digital circuits

• Zero power fail safe circuits

• Backup battery circuits & power failure detector

• Low level voltage clamp & zero crossing detector

• Source followers and buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Analog switches / multiplexers

• Voltage comparators and level shifters

PIN CONFIGURATION

GS(th)

N/C*

match (V

DS(ON)

*N/C pins are internally connected.

Connect to V- to reduce noise

V -

PC, SC PACKAGES

PA, SA PACKAGES

ALD110900

) to 2mV and 10mV

M 1

M 4

M 1

ALD110800

=0.0V of 104K

M 2

M 3

M 2

GS(th)

V -

tempco

GS(th)

V -

N/C*

= +0.0V

EPAD

Related parts for ald110900a

ald110900a Summary of contents

Page 1

... Plastic Dip SOIC Package Package ALD110800APC ALD110800ASC ALD110900APA ALD110900ASA ALD110800PC ALD110800SC * Contact factory for industrial temp. range or user-specified threshold voltage values Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 ...

Page 2

... Gate Leakage Current 1 I GSS Input Capacitance C ISS Transfer Reverse Capacitance C RSS Turn-on Delay Time t on Turn-off Delay Time t off Crosstalk Notes: Consists of junction leakage currents 1 ALD110800/ALD110800A/ALD110900/ALD110900A ° C unless otherwise specified ALD110800A / ALD110900A ALD110800/ ALD110900 Min Typ Max Min -0.01 0.00 0.01 -0. -1.7 0.0 +1.6 12.0 3.0 1 ...

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