bsc190n15ns3g Infineon Technologies Corporation, bsc190n15ns3g Datasheet - Page 6

• Manufacturer Part Number: bsc190n15ns3g
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
60
55
50
45
40
35
30
25
20
15
10
DS
=f(T
5
0
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=50 A; V
20
20
GS
98%
40
V
=10 V
T
DS
j
60
[°C]
[V]
typ
60
100
Crss
Coss
Ciss
80
140
100
180
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
175 °C
DS
20
90 µA
V
T
25 °C
SD
j
60
[°C]
1
[V]
25°C, 98%
900 µA
BSC190N15NS3 G
175°C, 98%
100
1.5
140
2008-11-12
180
2