bsc014n03msg Infineon Technologies Corporation, bsc014n03msg Datasheet - Page 6

• Manufacturer Part Number: bsc014n03msg
• Description: Optimos 3 M-series Power- Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
DS
=f(T
3
2
1
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=30 A; V
20
10
98 %
GS
V
=10 V
T
DS
j
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
150 °C
=V
0.5
DS
20
; I
D
=250 µA
V
T
SD
j
1.0
60
[°C]
[V]
25 °C
25 °C, 98%
BSC014N03MS G
100
1.5
140
150 °C, 98%
2008-11-14
180
2.0