2sd1412 Inchange Semiconductor Company, 2sd1412 Datasheet
2sd1412
Manufacturer Part Number
2sd1412
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1412.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Low Collector Saturation Voltage
·Collector-Emitter Breakdown Voltage-
·Complement to Type 2SB1019
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: V
: V
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
J
CE(sat)
(BR)CEO
B
Silicon NPN Power Transistor
= 0.4V(Max)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 50V (Min)
a
C
=25℃
=25℃
PARAMETER
C
= 4A
a
=25
℃)
-55~150
VALUE
150
70
50
30
5
7
1
2
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SD1412
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2sd1412 Summary of contents
Page 1
... Base Current-Continuous B B Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn =25 ℃) a VALUE UNIT ℃ 150 ℃ -55~150 isc Product Specification 2SD1412 ...
Page 2
... 10V 1MHz test 1A 0.3A 10Ω 30V 2SD1412 MIN TYP. MAX UNIT 50 V 0.4 V 1.2 V μA 30 μ 240 30 250 pF 10 MHz μs 0.2 μs 2.5 μs 0.5 ...