s71gl128nb0 Meet Spansion Inc., s71gl128nb0 Datasheet - Page 19

• Manufacturer Part Number: s71gl128nb0
• Description: Stacked Multi-chip Product Mcp 512/256/128 Megabit 32/16/8 M X 16-bit Cmos 3.0 Volt-only Mirrorbittm Page-mode Flash Memory With 32 Megabit 2m X 16-bit Psram
• Manufacturer: Meet Spansion Inc.

S29GLxxxN MirrorBit
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit process technology
Datasheet
Distinctive Characteristics
Architectural Advantages
Performance Characteristics
This document contains information on a product under development at Spansion LLC. The information is intended to help you evaluate this product. Spansion LLC
reserves the right to change or discontinue work on this proposed product without notice.
Single power supply operation
— 3 volt read, erase, and program operations
Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels)
Manufactured on 110 nm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
— S29GL256N: Two hundred fifty-six 64 Kword (128
— S29GL128N: One hundred twenty-eight 64 Kword
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
100,000 erase cycles per sector typical
20-year data retention typical
High performance
and outputs are determined by voltage on V
V
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
Kbyte) sectors
Kbyte) sectors
(128 Kbyte) sectors
power supply flash, and superior inadvertent write
protection
IO
range is 1.65 to V
Publication Number S29GLxxxN_00
CC
TM
Flash Family
IO
input.
Revision A
Software & Hardware Features
Amendment 4
— 80 ns access time (S29GL128N, S29GL256N),
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
Low power consumption (typical values at 3.0 V, 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
— CFI (Common Flash Interface) compliant: allows host
Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
90 ns access time (S29GL512N)
programming time for multiple-word updates
before programming operation is completed
sectors before an erase operation is completed
multiple-word or byte programming time
system to identify and accommodate multiple flash
devices
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
erase cycle completion
Issue Date June 14, 2004
INFORMATION
ADVANCE