s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 54

• Manufacturer Part Number: s71ws512ne0bfwzz
• Description: Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
• Manufacturer: Meet Spansion Inc.

54
Autoselect Command Sequence
The reset command may be written between the sequence cycles in a program
command sequence before programming begins (prior to the third cycle). This re-
sets the bank to which the system was writing to the read mode. If the program
command sequence is written to a bank that is in the Erase Suspend mode, writ-
ing the reset command returns that bank to the erase-suspend-read mode. Once
programming begins, however, the device ignores reset commands until the op-
eration is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to the read mode. If a bank entered the autoselect mode while
in the Erase Suspend mode, writing the reset command returns that bank to the
erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command
returns the banks to the read mode (or erase-suspend-read mode if that bank
was in Erase Suspend and program-suspend-read mode if that bank was in Pro-
gram Suspend).
Note: If DQ1 goes high during a Write Buffer Programming operation, the system
must write the “Write to Buffer Abort Reset” command sequence to RESET the
device to reading array data. The standard RESET command will not work. See
Table 17 for details on this command sequence.
The autoselect command sequence allows the host system to access the manu-
facturer and device codes, and determine whether or not a sector is protected.
The
quirements. The autoselect command sequence may be written to an address
within a bank that is either in the read or erase-suspend-read mode. The autose-
lect command may not be written while the device is actively programming or
erasing in the other bank. Autoselect does not support simultaneous operations
nor synchronous mode.
The autoselect command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle that contains the bank address and the au-
toselect command. The bank then enters the autoselect mode. The system may
read at any address within the same bank any number of times without initiating
another autoselect command sequence. Read commands to other banks will re-
turn data from the array. Writes to other banks is not allowed. The following table
describes the address requirements for the various autoselect functions, and the
resulting data. BA represents the bank address. The device ID is read in three
cycles.
Device ID, Word 1
Manufacturer ID
"Command Definition
Description
S29WSxxxN MirrorBit™ Flash Family For Multi-chip Products (MCP) S71WS512NE0BFWZZ_00_ A1 June 28, 2004
Table 17. Autoselect Addresses
(BA) + 00h
(BA) + 01h
Address
Summary" section shows the address and data re-
A d v a n c e
I n f o r m a t i o n
Read Data
0001h
227Eh