bsp030-04 NXP Semiconductors, bsp030-04 Datasheet - Page 3

• Manufacturer Part Number: bsp030-04
• Description: Bsp030 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07268
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
=
(%)
120
der
100
80
60
40
20
0
----------------------
P
tot 25 C
0
P
tot
DM
25
is single pulse.
100%
50
10 2
(A)
I D
10 -1
10
1
10 -1
75
P
100
t p
T
125
T sp (
R DSon = V DS / I D
=
150
o
t p
T
t
C)
03aa17
175
Rev. 04 — 26 July 2000
1
D.C.
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of solder point temperature.
(%)
=
I der
4.5 V
10
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
t p = 10 s
100 s
1 ms
10 ms
100 ms
50
75
03ac23
10 2
© Philips Electronics N.V. 2000. All rights reserved.
100
125
T sp ( o C)
BSP030
150
03aa25
175
3 of 13