bsp030-04 NXP Semiconductors, bsp030-04 Datasheet - Page 6

• Manufacturer Part Number: bsp030-04
• Description: Bsp030 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 07268
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
R DSon
function of drain-source voltage; typical values.
of drain current; typical values.
( )
Characteristics
(A)
I D
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
20
18
16
14
12
10
8
6
4
2
0
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.2
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0
0
10 V
2
2.8V 3 V
4
…continued
6
V GS = 5 V
3.2 V
8 10 12 14 16 18 20
3.4 V
T
V DS (V)
j
= 25
Conditions
I
Figure 13
I
dI
V
T j = 25 o C
S
S
V GS = 10V
GS
S
03ac25
o
= 1.25 A; V
= 1.25 A;
3.4 V
3.2 V
2.8 V
2.6 V
C
/dt = 100 A/ s;
3 V
I D (A)
03ac26
= 0 V; V
5V
Rev. 04 — 26 July 2000
DS
GS
= 25 V
= 0 V;
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
=
= 25 C and 150 C; V
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
(A)
I D
a
DSon 25 C
R
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
DSon
20
18
16
14
12
10
8
6
4
2
0
0
-60
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Min
V DS > I D X R DSon
-20
20
DS
Typ
0.73
120
150
150 o C
I
60
D
© Philips Electronics N.V. 2000. All rights reserved.
R
100
DSon
T j = 25 o C
T j ( o C)
Max
1.0
140
BSP030
V GS (V)
03aa27
03ac27
180
Unit
V
ns
nC
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