hcts365ms Intersil Corporation, hcts365ms Datasheet

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hcts365ms

Manufacturer Part Number
hcts365ms
Description
Radiation Hardened Hex Buffer/line Driver Non-inverting
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS365MS is a Radiation Hardened non-
inverting hex buffer and line driver with Tri-state outputs. The
output enables (OE1 and OE2) control the three-state out-
puts. If either OE1 or OE2 is high the outputs will be in a
High impedance state. For Data, OE1 and OE2 must be
Low.
The HCTS365MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
Ordering Information
HCTS365DMSR
HCTS365KMSR
HCTS365D/Sample
HCTS365K/Sample
HCTS365HMSR
Bit-Day (Typ)
- Bus Driver Outputs: 15 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A @ VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
1
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
HCTS365MS
Hex Buffer/Line Driver Non-Inverting
GND
OE1
SCREENING LEVEL
A1
Y1
A2
Y2
A3
Y3
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
OE1
A1
A2
A3
Y1
Y2
Y3
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
Radiation Hardened
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
Spec Number
9
File Number
PACKAGE
VCC
OE2
A6
Y6
A5
Y5
A4
Y4
VCC
OE2
A6
Y6
A5
Y5
A4
Y4
518637
3070.1

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hcts365ms Summary of contents

Page 1

... Input Current Levels VOL, VOH Description The Intersil HCTS365MS is a Radiation Hardened non- inverting hex buffer and line driver with Tri-state outputs. The output enables (OE1 and OE2) control the three-state out- puts. If either OE1 or OE2 is high the outputs will High impedance state ...

Page 2

... Functional Diagram 1 OE1 15 OE2 OE1 HCTS365MS ONE OF THE IDENTICAL CIRCUITS TRUTH TABLE INPUTS OE2 GND OUTPUTS 518637 Spec Number ...

Page 3

... VCC = 4.5V, VIH = 2.25V, Functional Test VIL = 0.8V (Note 2) NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO Specifications HCTS365MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . 25mA Maximum Package Power Dissipation at +125 SBDIP Package ...

Page 4

... VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50 A Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50 A Specifications HCTS365MS GROUP (NOTES SUB- CONDITIONS GROUPS TEMPERATURE 9 10 10, 11 ...

Page 5

... PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. Specifications HCTS365MS (NOTES 1, 2) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP DELTA LIMIT 5 5 -15 Hour 5 TABLE 6 ...

Page 6

... Each pin except VCC and GND will have a resistor of 680 OPEN 11, 13 NOTE: Each pin except VCC and GND will have a resistor of 47K Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Specifications HCTS365MS TABLE 7. TOTAL DOSE IRRADIATION TEST PRE RAD POST RAD ...

Page 7

... Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. HCTS365MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs ...

Page 8

... Three-State Low Timing Diagrams VIH INPUT VS VIL TPZL VOZ VT OUTPUT VOL THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 0.90 GND 0 HCTS365MS AC Load Circuit TPHL TTHL 80% 20% UNITS Three-State Low Load Circuit TPLZ VW UNITS DUT TEST ...

Page 9

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 HCTS365MS Three-State High Load Circuit DUT TPHZ VW UNITS V V ...

Page 10

... Metallization Mask Layout Y1 (3) A2 ( (6) NC NOTE: The die diagram is a generic plot form a similar HCS device intended to indicate approximate die size and bond pad location. The mask series for the HCTS365 is TA14413A. HCTS365MS HCTS365MS A1 OE1 VCC (2) (1) (16) (7) (8) NC (9) ...

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