ipb027n10n3 Infineon Technologies Corporation, ipb027n10n3 Datasheet
ipb027n10n3
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ipb027n10n3 Summary of contents
Page 1
... =100 ° =25 °C D,pulse C =25 Ω =100 =25 °C tot stg page 1 IPB027N10N3 G 100 V 2.7 mΩ 120 A Value Unit 120 A 120 480 1000 mJ ±20 V 300 W -55 ... 175 °C 55/175/56 2009-02-17 ...
Page 2
... GSS = =100 A DS(on = |>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPB027N10N3 G Values Unit min. typ. max 0.5 K 100 - - V 2 2.7 3.5 - 0.1 1 µ 100 - 1 100 ...
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... oss =25 ° S,pulse =100 =25 ° = =100 /dt =100 A/µ page 3 IPB027N10N3 G Values Unit min. typ. max. - 11100 14800 pF - 1940 2580 - ...
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... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPB027N10N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 ...
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... [ Typ. forward transconductance g =f 240 200 160 120 80 25 °C 40 175 ° [V] GS page 5 IPB027N10N3 =25 ° 4 7 120 I [A] D =25 ° 120 I [A] D 160 160 2009-02-17 ...
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... Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss 1 10 Crss [V] DS page 6 IPB027N10N3 2750 µA 275 µA - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1 1.5 V [V] ...
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... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB027N10N3 =100 A pulsed gate 120 Q [nC] gate 160 Q ...
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... PG-TO263-3: Outline Rev. 2.2 page 8 IPB027N10N3 G 2009-02-17 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 IPB027N10N3 G 2009-02-17 ...