ipb027n10n3 Infineon Technologies Corporation, ipb027n10n3 Datasheet - Page 5

• Manufacturer Part Number: ipb027n10n3
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
300
250
200
150
100
300
250
200
150
100
50
50
DS
GS
0
0
); T
0
0
); |V
0
j
=25 °C
7.5 V
j
GS
DS
|>2|I
10 V
D
|R
2
DS(on)max
6 V
5.5 V
V
V
GS
DS
1
175 °C
[V]
[V]
4.5 V
5 V
4
25 °C
page 5
2
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
240
200
160
120
5
4
3
2
1
0
80
40
D
=f(I
0
0
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
40
40
4.5 V
5 V
I
I
D
D
80
80
[A]
[A]
6 V
IPB027N10N3 G
7.5 V
120
120
10 V
2009-02-17
160
160