k4x56163p-lg Samsung Semiconductor, Inc., k4x56163p-lg Datasheet - Page 20

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k4x56163p-lg

Manufacturer Part Number
k4x56163p-lg
Description
16mx16 Mobile Ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K4X56163PI - L(F)E/G
NOTE :
1) All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2) ILLEGAL to bank in specified state ; function may be legal in the bank indicated by BA, depending on the state of that bank.
3) Must satisfy bus contention, bus turn around and write recovery requirements.
4) NOP to bank precharging or in idle sate. May precharge bank indicated by BA.
5) ILLEGAL if any bank is not idle.
6) Refer to "Read with Auto Precharge Timing Diagram" for detailed information.
7) Refer to "Write with Auto Precharge Timing Diagram" for detailed information.
8) CKE Low to High transition will re-enable CK, CK and other inputs asynchronously.
9) Power-Down, Self-Refresh and Deep Power Down Mode can be entered only from All Bank Idle state.
10) The Deep Power Down Mode is exited by asserting CKE high and full initialization is required after exiting Deep Power Down Mode.
REFRESHING
DEEP POWER
(ILLEGAL = Device operation and/or data integrity are not guaranteed.)
A minimum setup time must be satisfied before issuing any command other than EXIT.
Current State
ALL BANKS
POWER
DOWN
DOWN
IDLE
SELF-
9)
8)
CKE
n-1
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
CKE
H
H
H
H
H
H
H
H
X
n
L
L
L
L
L
L
L
L
L
L
CS
H
X
X
X
H
X
X
H
X
L
L
L
L
L
L
L
L
L
L
RAS
H
H
H
H
H
H
H
X
L
X
X
X
X
X
X
L
X
L
X
CAS
X
H
H
X
X
X
X
X
X
X
X
H
H
H
X
X
L
L
L
WE
X
H
X
X
X
X
X
X
X
X
H
X
H
X
X
X
L
L
L
- 23 -
Add
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Exit Self-Refresh
Exit Self-Refresh
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self-Refresh)
Exit Power Down(Idle after tPDEX)
NOP (Maintain Power Down)
Exit Deep Power Down
NOP (Maintain Deep Power Down)
Refer to Function Truth Table
Enter Self-Refresh
Enter Power Down
Enter Power Down
Enter Deep Power Down
ILLEGAL
ILLEGAL
ILLEGAL
Refer to Current State=Power Down
(H=High Level, L=Low level, X=Donct Care)
10)
Mobile DDR SDRAM
Action
October 2007

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