k4x56163p-lg Samsung Semiconductor, Inc., k4x56163p-lg Datasheet - Page 9

• Manufacturer Part Number: k4x56163p-lg
• Description: 16mx16 Mobile Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4X56163PI - L(F)E/G
9.3. Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self
refresh cycle automatically according to the two temperature ranges ; 45 qC and 85 qC.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
NOTE :
1) It has +/- 5 qC tolerance.
9.4. Partial Array Self Refresh (PASR)
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
Temperature Range
45 qC
85 qC
BA1=0
BA0=0
BA1=1
BA0=0
- Full Array
1)
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
200
450
Figure 4. EMRS code and TCSR , PASR
1/2 Array
160
300
- E
BA1=0
BA0=0
BA1=1
BA0=0
- 1/2 Array
Self Refresh Current (IDD6)
1/4 Array
140
250
- 12 -
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
150
300
1/2 Array
135
250
- G
Mobile DDR SDRAM
BA1=0
BA0=0
BA1=1
BA0=0
Partial Self Refresh Area
- 1/4 Array
1/4 Array
130
225
BA1=0
BA0=1
BA1=1
BA0=1
October 2007
Unit
uA