STE180NE10_07 STMICROELECTRONICS [STMicroelectronics], STE180NE10_07 Datasheet
STE180NE10_07
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STE180NE10_07 Summary of contents
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General features Type V DSS STE180NE10 100V ■ 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STE180NE10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous 100°C ...
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Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...
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STE180NE10 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...
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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STE180NE10 ...
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STE180NE10 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/12 ...
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Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. ...
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STE180NE10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...
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Package mechanical data DIM 10/12 ISOTOP MECHANICAL DATA mm MIN. TYP. MAX. 11.8 12.2 8.9 9.1 1.95 2.05 0.75 0.85 12.6 12.8 25.15 25.5 31.5 ...
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STE180NE10 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 20-Feb-2007 Revision 4 Complete document 5 New template, no content change 6 Typo mistake on page 1 Revision history Changes 11/12 ...
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...