MMBD914LT1G_09 ONSEMI [ON Semiconductor], MMBD914LT1G_09 Datasheet
MMBD914LT1G_09
Manufacturer Part Number
MMBD914LT1G_09
Description
High-Speed Switching Diode
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MMBD914LT1G_09.pdf
(3 pages)
MMBD914LT1G
High-Speed Switching
Diode
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Range
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Forward Voltage
Reverse Recovery Time
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FR−5 Board (Note 1)
T
Derate above 25°C
Alumina Substrate (Note 2)
T
Derate above 25°C
(I
(V
(V
(V
(I
(I
A
A
R
F
F
R
R
R
= 25°C
= 25°C
= 10 mAdc)
= I
= 100 mAdc)
= 20 Vdc)
= 75 Vdc)
= 0, f = 1.0 MHz)
R
= 10 mAdc) (Figure 1)
Characteristic
Characteristic
Rating
(T
A
I
Symbol
Symbol
Symbol
FM(surge)
T
V
= 25°C unless otherwise noted)
R
R
J
V
P
P
, T
C
V
(BR)
I
I
t
qJA
qJA
R
F
rr
R
D
D
T
F
stg
−55 to +150
Min
100
−
−
−
−
−
Value
Max
100
200
500
225
556
300
417
1.8
2.4
Max
5.0
4.0
1.0
4.0
25
−
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
nAdc
mAdc
Unit
Unit
Unit
Vdc
mW
mW
Vdc
Vdc
pF
°C
ns
†For information on tape and reel specifications,
MMBD914LT1G
MMBD914LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
CATHODE
ORDERING INFORMATION
5D
M
G
MARKING DIAGRAM
3
http://onsemi.com
1
= Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
1
SOT−23
SOT−23
CASE 318
STYLE 8
SOT−23
5D M G
Publication Order Number:
G
2
3
10,000/Tape & Reel
3000/Tape & Reel
ANODE
MMBD914LT1/D
Shipping
1
†
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MMBD914LT1G_09 Summary of contents
Page 1
MMBD914LT1G High-Speed Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note ...
Page 2
W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...
Page 3
D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...