ACS253DMSR-02 INTERSIL [Intersil Corporation], ACS253DMSR-02 Datasheet - Page 2

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ACS253DMSR-02

Manufacturer Part Number
ACS253DMSR-02
Description
Radiation Hardened Dual 4-Input Multiplexer with Three-State Outputs
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE
SUBSTRATE POTENTIAL:
Metallization Mask Layout
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Size: 2390 m x 2390 m (94 mils x 94 mils)
Thickness: 525 m 25 m (20.6 mils 1 mil)
Bond Pad: 110 m x 110 m (4.3 mils x 4.3 mils)
Type: Al
Metal 1 Thickness: 0.7 m 0.1 m
Metal 2 Thickness: 1.0 m 0.1 m
Silicon on Sapphire (SOS)
Unbiased Insulator
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
1T
1I
1I
1I
3
2
1
0
1Y
S1
ACS253MS
GND
ACS253MS
10E
2
BACKSIDE FINISH:
PASSIVATION:
SPECIAL INSTRUCTIONS:
ADDITIONAL INFORMATION:
V
2Y
Sapphire
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30 m 0.15 m
Bond V
Worst Case Density: <2.0 x 10
Transistor Count: 140
CC
20E
CC
2I
0
First
S
2I
2I
2I
5
0
3
2
1
A/cm
2

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