MRF6V2010NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6V2010NR1_08 Datasheet

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MRF6V2010NR1_08

Manufacturer Part Number
MRF6V2010NR1_08
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed primarily for CW large - signal output and driver applications with
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Output Power
13 inch Reel.
13 inch Reel.
Case Temperature 81°C, 10 W CW
out
Power Gain — 23.9 dB
Drain Efficiency — 62%
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 10 Watts
Characteristic
Rating
DD
= 50 Volts, I
DQ
= 30 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
CASE 1265 - 09, STYLE 1
Document Number: MRF6V2010N
MRF6V2010NBR1
MRF6V2010NR1 MRF6V2010NBR1
MRF6V2010NR1
MRF6V2010NR1
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
TO - 270 - 2
RF POWER MOSFETs
PLASTIC
CASE 1337 - 04, STYLE 1
BROADBAND
- 65 to +150
- 0.5, +110
Value
- 0.5, +10
MRF6V2010NBR1
Value
150
200
3.0
TO - 272 - 2
PLASTIC
(1,2)
Rev. 4, 3/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6V2010NR1_08 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: V ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC ...

Page 3

B1 V BIAS + + INPUT 0.235″ x 0.082″ Microstrip Z2 1.190″ x 0.082″ Microstrip Z3 0.619″ x 0.082″ Microstrip Z4 0.190″ x 0.270″ Microstrip Z5 0.293″ x 0.270″ Microstrip ...

Page 4

MRF6V2010N/NB Rev. 3 Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout MRF6V2010NR1 MRF6V2010NBR1 C12 R1 C11 C8 L1 C10 C9 C14 B2 C13 C15 L2 C16 C17 C18 L3 RF Device Data ...

Page 5

C iss 10 C oss Measured with ±30 mV(rms) MHz Vdc GS C rss 0 DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 3. Capacitance versus Drain - Source Voltage ...

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OUTPUT POWER (WATTS) CW out Figure 9. Power Gain versus Output ...

Page 7

Figure 14. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 220 MHz Vdc mA out f Z source MHz W ...

Page 8

C10 Figure 15. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 130 MHz Table 7. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 130 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface ...

Page 9

C10 C20 Figure 16. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 450 MHz Table 8. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz Part B1 Ω, 100 MHz Long Ferrite ...

Page 10

C11 C10 Figure 17. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 64 MHz Table 9. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 64 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface ...

Page 11

MHz Z source f = 220 MHz Z Figure 18. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 50 Ω source f = 130 MHz Z source MHz ...

Page 12

Table 10. Common Source S - Parameters MHz |S | ∠ φ 0.997 - 5.0 20 0.994 - 9.5 30 0.992 - 14.5 40 0.987 - 19.3 50 0.981 - 24.0 60 0.974 - ...

Page 13

Table 10. Common Source S - Parameters MHz |S | ∠ φ 11 800 0.858 - 139.7 820 0.861 - 140.7 840 0.864 - 141.6 860 0.867 - 142.6 880 0.870 - 143.5 900 0.873 - ...

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MRF6V2010NR1 MRF6V2010NBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 15 ...

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MRF6V2010NR1 MRF6V2010NBR1 16 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 17 ...

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MRF6V2010NR1 MRF6V2010NBR1 18 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 19 ...

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Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting ...

Page 21

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 480 ...

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