MRF6V2010NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6V2010NR1_08 Datasheet - Page 11

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MRF6V2010NR1_08

Manufacturer Part Number
MRF6V2010NR1_08
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
RF Device Data
Freescale Semiconductor
f = 450 MHz Z
source
Figure 18. Series Equivalent Source and Load Impedance
f = 220 MHz Z
f = 130 MHz Z
Input
Matching
Network
Z
Z
source
load
MHz
130
220
450
f = 64 MHz Z
64
f
source
= Test circuit impedance as measured from
= Test circuit impedance as measured
source
V
DD
gate to ground.
from drain to ground.
Z
= 50 Vdc, I
source
source
37.5 + j15.1
26.7 + j21.3
20.0 + j25.4
7.70 + j21.0
Z
Device
Under
Test
source
DQ
W
Z
o
= 30 mA, P
= 50 Ω
Z
load
out
= 10 W CW
94.5 + j16.7
83.8 + j35.0
75.0 + j44.0
43.0 + j49.0
Z
f = 450 MHz Z
Output
Matching
Network
load
W
f = 220 MHz Z
f = 130 MHz Z
load
MRF6V2010NR1 MRF6V2010NBR1
f = 64 MHz Z
load
load
load
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