MRF6V2010NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6V2010NR1_08 Datasheet - Page 5

• Manufacturer Part Number: MRF6V2010NR1_08
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
100
0.1
0.35
0.25
0.15
0.05
10
0.3
0.2
0.1
Figure 3. Capacitance versus Drain - Source Voltage
1
0
0
−20
−25
−30
−35
−40
−45
−50
−55
Figure 5. DC Drain Current versus Drain Voltage
0
1
Figure 7. Third Order Intermodulation Distortion
30 mA
23 mA
15 mA
38 mA
20
10
V
I
DQ
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
= 60 mA
P
out
DRAIN VOLTAGE (VOLTS)
C
C
C
40
versus Output Power
, OUTPUT POWER (WATTS) PEP
iss
oss
rss
45 mA
Measured with ±30 mV(rms)ac @ 1 MHz
V
20
GS
= 0 Vdc
60
2.5 V
30
V
f1 = 220 MHz, f2 = 220.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
DD
= 50 Vdc
80
2.63 V
V
GS
TYPICAL CHARACTERISTICS
40
= 3 V
10
2.75 V
100
2.25 V
120
50
20
100
0.1
25
24
23
22
21
20
19
18
47
45
43
41
39
37
10
1
13
0.1
Figure 8. CW Output Power versus Input Power
1
23 mA
30 mA
15 mA
Figure 6. CW Power Gain versus Output Power
P1dB = 40.43 dBm (11.04 W)
38 mA
38 mA
T
C
I
I
DQ
DQ
= 25°C
Figure 4. DC Safe Operating Area
= 45 mA
= 45 mA
P3dB = 40.87 dBm (12.2 W)
15
V
DS
P
, DRAIN−SOURCE VOLTAGE (VOLTS)
out
, OUTPUT POWER (WATTS) CW
P
in
MRF6V2010NR1 MRF6V2010NBR1
, INPUT POWER (dBm)
17
1
10
V
f = 220 MHz
19
DD
V
f1 = 220 MHz
= 50 Vdc, I
DD
= 50 Vdc
DQ
21
= 30 mA
100
10
Actual
Ideal
200
23
20
5