MRF9030_08 FREESCALE [Freescale Semiconductor, Inc], MRF9030_08 Datasheet

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MRF9030_08

Manufacturer Part Number
MRF9030_08
Description
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 26 volt
base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF9030
LATERAL N - CHANNEL
MRF9030LR1
CASE 360B - 05, STYLE 1
945 MHz, 30 W, 26 V
RF POWER MOSFET
M1 (Minimum)
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +68
- 0.5, + 15
Value
Value
Class
0.53
150
200
1.9
92
NI - 360
Rev. 8, 9/2008
MRF9030LR1
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF9030_08 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of this device ...

Page 2

Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero Gate Voltage Drain Leakage Current ( Vdc Vdc ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain ( Vdc PEP out 945.0 ...

Page 4

INPUT Short Ferrite Bead B2 Long Ferrite Bead C1, C8, C13, C14 47 pF Chip Capacitors C2 8.0 pF Trim ...

Page 5

G 19 η IMD 15 IRL 930 Figure 3. Class AB Broadband Circuit Performance 375 mA DQ 19.5 19 300 mA 250 mA 18.5 200 ...

Page 6

This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of ...

Page 7

Figure 10. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 5 Ω source Z load f = 930 MHz f = 930 MHz f = 960 MHz f = 960 MHz V = ...

Page 8

(FLANGE bbb ccc T M (LID SEATING T PLANE M bbb (INSULATOR MRF9030LR1 8 PACKAGE DIMENSIONS Q aaa T ...

Page 9

Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 8 Sept. 2008 • Data sheet revised to ...

Page 10

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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