MRF9030_08 FREESCALE [Freescale Semiconductor, Inc], MRF9030_08 Datasheet - Page 5

• Manufacturer Part Number: MRF9030_08
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
19.5
18.5
17.5
20
19
18
17
0
Figure 6. Intermodulation Distortion Products
V
I
f1 = 945 MHz, f2 = 945.1 MHz
DQ
Figure 4. Power Gain versus Output Power
I
300 mA
250 mA
200 mA
DD
DQ
= 250 mA
= 26 Vdc
= 375 mA
1
1
P
P
out
out
, OUTPUT POWER (WATTS) PEP
versus Output Power
, OUTPUT POWER (WATTS) PEP
3rd Order
5th Order
7th Order
20
19
18
17
16
15
14
13
12
10
Figure 3. Class AB Broadband Circuit Performance
10
930
V
f1 = 945 MHz, f2 = 945.1 MHz
DD
G
η
IMD
IRL
ps
= 26 Vdc
935
TYPICAL CHARACTERISTICS
100
V
P
I
Two−Tone, 100 kHz Tone Spacing
DQ
100
DD
out
f, FREQUENCY (MHz)
940
= 250 mA
= 30 W (PEP)
= 26 Vdc
945
22
20
18
16
14
12
10
−20
−30
−40
−50
−60
0.1
950
Figure 7. Power Gain and Efficiency versus
V
I
f = 945 MHz
DQ
DD
Figure 5. Intermodulation Distortion versus
V
f1 = 945 MHz, f2 = 945.1 MHz
DD
= 250 mA
= 26 Vdc
= 26 Vdc
955
1
P
out
P
out
, OUTPUT POWER (WATTS) AVG.
I
DQ
, OUTPUT POWER (WATTS) PEP
960
1
Output Power
= 200 mA
50
45
40
35
−30
−32
−34
−36
−38
Output Power
300 mA
375 mA
G
η
ps
10
−10
−12
−14
−16
−18
10
250 mA
MRF9030LR1
100
100
60
50
40
30
20
10
0
5