JANHCA2N2484 STMICROELECTRONICS [STMicroelectronics], JANHCA2N2484 Datasheet

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JANHCA2N2484

Manufacturer Part Number
JANHCA2N2484
Description
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
UB), and figures 4 and 5 (die).
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
1.3 Maximum ratings.
(1) Derate linearly at 3.08 mW/ C above T
(2) Derate linearly at 4.76 mW/ C above T
1.4 Primary electrical characteristics.
(1) Pulsed (see 4.5.1).
Limits
Min
Max
2N2484UA
2N2484UB
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
2N2484
Types
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
V
I
C
CE
f = 1 kHz
= 1 mA dc
T
= 5 V dc
250
900
A
h
500 (1)
650 (2)
500 (1)
= +25 C
fe
mW
P
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
T
100 kHz
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
V
V
V dc
60
60
60
CB
CBO
I
E
C
= 5 V dc
5.0
pF
obo
= 0
f
1 MHz
PERFORMANCE SPECIFICATION
V
V dc
EBO
6
6
6
A
A
= +37.5 C
= +63.5 C.
I
C
V
f = 30 MHz
= 500 A dc
CE
|h
V
V dc
= 5 V dc
2.0
7.0
60
60
60
fe
CEO
|2
mA dc
50
50
50
I
C
I
I
C
B
V
= 0.1 mA dc
= 1.0 mA dc
CE(sat)
V dc
0.3
(1)
T
-65 to +200
-65 to +200
-65 to +200
J
and T
C
STG
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
INCH-POUND
R
C/W
325
210
325
JA
R
C/W
146
160
146
FSC 5961
JC

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JANHCA2N2484 Summary of contents

Page 1

The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 November 2000. SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved ...

Page 2

Dimensions Symbol Inches Millimeters Min Max Min CD .178 .195 4.52 CH .170 .210 4.32 HD .209 .230 5.31 LC .100 TP 2. .016 .021 0.41 LL .500 .750 12 .016 .019 0.41 L1 --- .050 ...

Page 3

Symbol NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimension "A" controls the overall package thickness. When a ...

Page 4

Ltr NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimensions B2 and B3 are identical Dimension L2 is identical ...

Page 5

NOTES: 1. Die size...............................................0.015 x 0.019 inches 2. Die thickness.......................................0.010 3. Top metal............................................Aluminum 15,000Å minimum, 18,000Å nominal 4. Back metal..........................................A. Gold 2,500Å minimum, 3,000Å nominal 5. Backside .............................................Collector 6. Bonding pad........................................B = 0.003 inches 0.004 inches diameter 7. ...

Page 6

Die size:.....................................................0.018 x 0.018 inches Die thickness: ............................................0.008 Base pad: ..................................................0.0025 inches diameter Emitter pad: ...............................................0.003 inches diameter Back metal:................................................Gold, 6500 Top metal: .................................................Aluminum, 19500 Back side: ..................................................Collector Glassivation:..............................................SiO2, 7500 FIGURE 5. Physical dimensions, JANHC and JANKC die ...

Page 7

Primary electrical characteristics dc 100 Hz dB Min Max 7.5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. ...

Page 8

REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity ...

Page 9

Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of ...

Page 10

Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group ...

Page 11

Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from each wafer in ...

Page 12

Inspection 1/ Method Subgroup 1 2/ Visual and mechanical 2071 examination 3/ Solderability 3/ 4/ 2026 Resistance to solvents 1022 Temperature cycling 3/ 4/ 1051 Hermetic seal 4/ 1071 Fine leak Gross leak Electrical measurements 4/ Bond ...

Page 13

Inspection 1/ Method Subgroup 2 - continued. Forward-current transfer ratio 3076 Forward-current transfer ratio 3076 Forward-current transfer ratio 3076 Forward-current transfer ratio 3076 Forward-current transfer ratio 3076 Collector to emitter voltage 3071 (saturated) Base emitter voltage 3066 (nonsaturated) Subgroup 3 ...

Page 14

Inspection 1/ Method Subgroup 4 - continued. Small-signal short- circuit 3206 forward current transfer ratio Open circuit output 3236 capacitance Input capacitance (output 3240 open-circuited) Noise figure 3246 Noise figure 3246 Noise figure 3246 Noise figure (wideband) 3246 Subgroups 5 ...

Page 15

TABLE II. Group E inspection (all quality levels) - For qualification only. Inspection Method Subgroup 1 Temperature cycling 1051 (air to air) Hermetic seal 1071 Fine leak Gross leak Electrical measurements Subgroup 2 Intermittent life 1037 Electrical measurements Subgroup 3 ...

Page 16

TABLE III. Groups B and C delta measurements Step Inspection 1 Forward-current transfer ratio 2. Collector to emitter voltage (saturated) 3. Collector to emitter cutoff current 1/ The delta measurements for group B, table VIa (JANS) of ...

Page 17

... JANHCA1N645-1) will be identified on the QML. PIN 2N2484 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. MIL-PRF-19500/376E JANC ordering information Manufacturer 43611 JANHCA2N2484 JANHCB2N2484 JANKCA2N2484 JANKCB2N2484 17 34156 ...

Page 18

Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Review activities: Army - AR, MI, SM Navy - AS, CG, MC, SH Air Force - 13, 19 MIL-PRF-19500/376E 18 Preparing activity: DLA ...

Page 19

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL 1. The preparing activity must complete blocks and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, ...

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