RF38F001000YBQ0 NUMONYX [Numonyx B.V], RF38F001000YBQ0 Datasheet - Page 22

• Manufacturer Part Number: RF38F001000YBQ0
• Description: Wireless Flash Memory (W18/W30 SCSP)
• Manufacturer: NUMONYX [Numonyx B.V]

Table 10: SRAM AC Characteristics (Write)
Figure 6:
7.3
Table 11: PSRAM AC Characteristics (85ns or 88ns Initial Access) — Read Operations
Datasheet
22
Notes:
1.
2.
3.
4.
5.
R-UB#, R-LB#
ADDRESSES
W1
W2
W3
W4
W5
W6
W7
W8
W9
R1
R2
R3
#
#
S-CS1#
R-WE#
S-CS2
R-OE#
DATA
See
A write occurs during the overlap (t
WE# goes low with asserting R-UB# and R-LB# for single byte operation or simultaneously asserting R-UB#R-LB# and
R-LB# for double byte operation. A write ends at the earliest high transition of S-CS1# and R-WE#.
t
t
t
goes high.
WP
AS
WR
Symbol
Symbol
is measured from the address valid to the beginning of a write.
is measured from S-CS1# low to the end of a write.
is measured from the end of write to the address change. t
Figure 6, “AC Waveform SRAM Write Operations”
t
t
t
t
t
t
t
t
t
t
t
t
AC Waveform SRAM Write Operations
DW
WC
WP
AW
CW
WR
BW
DH
RC
CO
AS
AA
PSRAM AC Characteristics
1
Standby
Read Cycle Time
Address to Output Delay
P-CS# to Output Delay
Write Cycle Time
Address Setup to R-WE# (S-CS1#) and R-UB#/R-LB# Low
R-WE# (S-CS1#) Pulse Width
Data to Write Time Overlap
Address Setup to R-WE# (S-CS1#) High
S-CS1# (R-WE#) Setup to R-WE# (S-CS1#) High
Data Hold from R-WE# (S-CS1#) High
Write Recovery
R-UB#, R-LB# Setup to R-WE# (S-CS1#) High
W2
Parameter
WP
) of low S-CS1# and low R-WE#. A write begins when S-CS1# goes low and R-
Parameter
5
Address Stabl e
W5
W6
W1
W1
Min
WR
88
W9
W9
–
–
W3
W3
32WQ and 64WQ Family with Asynchronous RAM
32WQ and 64WQ Family with Asynchronous RAM
applied in case a write ends as S-CS1# or R-WE#
1.8 V
.
4,000
Max
W4
88
88
Data In
Min
70
55
30
60
60
60
Min
0
0
0
85
–
–
3.0 V
4,000
Max
Max
85
85
–
–
–
–
–
–
–
–
–
Order Number: 251407-13
W8
W7
Unit
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
November 2007
Notes
Notes
1,2,3
1,4
1,5
1
1
1
1
1
1