M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet
M29DW641F70N1
Manufacturer Part Number
M29DW641F70N1
Description
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.M29DW641F70N1.pdf
(80 pages)
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December 2007
Features
Supply voltage
– V
– V
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access: 60, 70ns
Programming Time
– 10µs per Word typical
– 4 Words at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
– Parameter Blocks (at Top and Bottom)
Dual Operations
– While Program or Erase in a group of
Program/Erase Suspend and Resume modes
– Read from any Block during Program
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
Common Flash Interface
– 64 bit Security Code
100,000 Program/Erase cycles per block
Low power consumption
– Standby and Automatic Standby
Extended Memory Block
– Extra block used as security block or to
Read
8Mbit+24Mbit+24Mbit+8Mbit
banks (from 1 to 3), Read in any of the
other banks
Suspend
Erase Suspend
store additional information
CC
PP
/WP=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)
Rev 5
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Hardware Block Protection
– V
Software Block Protection
– Standard Protection
– Password Protection
Electronic Signature
– Manufacturer code: 0020h
– Device code: 227Eh + 2203h + 2200h
ECOPACK
protect of the four outermost parameter
blocks
PP
/WP Pin for fast program and write
3V Supply Flash Memory
®
packages
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
6 x 8mm
FBGA
M29DW641F
www.numonyx.com
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