M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 68

• Manufacturer Part Number: M29DW641F70N1
• Description: 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
• Manufacturer: NUMONYX [Numonyx B.V]

Common Flash Interface (CFI)
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Table 32.
1. Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds
Address
to addresses 008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to
3FFFFFh.
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
007Dh
0017h
0002h
0000h
0003h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Device Geometry Definition
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions
regions containing contiguous Erase Blocks of the same size.
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 007Dh+1
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 byte
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 bytes
Erase Block Region 4 information
n
in number of bytes
Description
(1)
. It specifies the number of
n
M29DW641F
64 Kbytes
8 Mbytes
8 Kbytes
8 Kbytes
Async.
Value
126
x16
8
3
8
8
0