74AHC1G09GW,125 NXP Semiconductors, 74AHC1G09GW,125 Datasheet - Page 4

• Manufacturer Part Number: 74AHC1G09GW,125
• Description: IC 2-IN AND GATE O-D 5TSSOP
• Manufacturer: NXP Semiconductors
• Series: 74AHCr

Specifications of 74AHC1G09GW,125

• Number Of Circuits: 1
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Logic Type: AND Gate with Open Drain
• Number Of Inputs: 2
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Product: AND
• Logic Family: AHC
• Low Level Output Current: 8 mA
• Propagation Delay Time: 3.2 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 74AHC1G09GW-G; 74AHC1G09GW-G; 935279914125

NXP Semiconductors
Table 7.
Voltages are referenced to GND (ground = 0 V).
11. Dynamic characteristics
Table 8.
GND = 0 V; for test circuit see
[1]
[2]
[3]
[4]
74AHC1G09_2
Product data sheet
Symbol Parameter
V
I
I
I
C
Symbol Parameter
t
C
I
OZ
CC
pd
OL
I
PD
t
Typical values are measured at V
Typical values are measured at V
C
P
f
f
C
V
N = number of inputs switching;
(C
pd
i
o
D
CC
PD
= input frequency in MHz;
L
= output frequency in MHz;
L
is the same as t
= output load capacitance in pF;
= C
is used to determine the dynamic power dissipation (P
= supply voltage in V;
V
LOW-level
output voltage
input leakage
current
OFF-state
output current
supply current V
input
capacitance
propagation delay A and B to Y;
power dissipation
capacitance
PD
CC
Static characteristics
Dynamic characteristics
2
V
CC
f
o
) = dissipation due to the output if the combination of the pull up voltage and resistance results in V
2
PZL
f
i
and t
N + (C
Conditions
V
V
V
V
GND; V
V
I
I
CC
I
I
CC
I
I
I
I
I
= V
= 5.5 V or GND;
= V
= V
O
O
O
O
O
PLZ
Figure
= 0 V to 5.5 V
= 5.5 V
L
Conditions
see
V
V
C
V
= 50 A; V
= 50 A; V
= 50 A; V
= 4.0 mA; V
= 8.0 mA; V
IH
IH
CC
.
CC
CC
I
L
C
C
C
C
= GND to V
V
CC
= 50 pF; f
CC
CC
or V
or V
L
L
L
L
Figure 5
CC
or GND; I
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
…continued
= 15 pF
= 50 pF
= 15 pF
= 50 pF
= 5.5 V
= 3.3 V.
= 5.0 V.
2
6.
IL
IL
; V
f
o
CC
CC
CC
) where:
CC
CC
O
i
= 1 MHz;
= 2.0 V
= 3.0 V
= 4.5 V
= V
O
CC
= 3.0 V
= 4.5 V
= 0 A;
CC
Rev. 02 — 18 December 2007
or
[1]
[2]
[3]
[4]
D
Min
in W).
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
25 C
Typ
1.5
25 C
0
0
0
-
-
-
-
-
Typ Max
4.6
6.5
3.2
4.6
5
Max
0.36
0.36
0.1
0.1
0.1
0.25
1.0
10
0.1
11.0
7.5
5.5
7.5
-
2-input AND gate with open-drain output
40 C to +85 C
40 C to +85 C
Min
Min
1.0
1.5
1.0
1.5
-
-
-
-
-
-
-
-
-
Max
0.44
0.44
Max
12.0
0.1
0.1
0.1
8.5
6.5
8.0
10
10
1.0
2.5
-
74AHC1G09
40 C to +125 C Unit
40 C to +125 C Unit
Min
Min
1.0
1.5
1.0
1.5
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
CC
at the output.
Max
0.55
0.55
Max
12.5
0.1
0.1
0.1
10.0
9.0
7.0
8.5
20
10
2.0
-
4 of 10
V
V
V
V
V
pF
ns
ns
ns
ns
pF
A
A
A