74AHC3G14GD,125 NXP Semiconductors, 74AHC3G14GD,125 Datasheet
74AHC3G14GD,125
Specifications of 74AHC3G14GD,125
74AHC3G14GD-G
935286837125
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74AHC3G14GD,125 Summary of contents
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Triple inverting Schmitt trigger Rev. 6 — 18 November 2010 1. General description 74AHC3G14 and 74AHCT3G14 are high-speed Si-gate CMOS devices. They provide three inverting buffers with Schmitt trigger action. These devices are capable of transforming slowly changing ...
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... NXP Semiconductors 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AHC3G14DP 74AHCT3G14DP −40 °C to +125 °C 74AHC3G14DC 74AHCT3G14DC −40 °C to +125 °C 74AHC3G14GT 74AHCT3G14GT −40 °C to +125 °C 74AHC3G14GD 74AHCT3G14GD 5. Marking Table 2. Marking codes ...
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... NXP Semiconductors 7. Pinning information 7.1 Pinning 74AHC3G14 74AHCT3G14 GND 4 001aai259 Fig 4. Pin configuration SOT505-2 and SOT765-1 Fig 6. Pin configuration SOT996-2 7.2 Pin description Table 3. Pin description Symbol Pin 1A, 2A GND 4 1Y, 2Y 74AHC_AHCT3G14 Product data sheet 74AHC3G14; 74AHCT3G14 Fig 5. Pin configuration SOT833-1 ...
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... NXP Semiconductors 8. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V supply voltage CC V input voltage I I input clamping current IK I output clamping current ...
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... NXP Semiconductors 11. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74AHC3G14 V HIGH-level output voltage = −50 μ −50 μ −50 μ −4.0 mA −8.0 mA LOW-level output voltage = 50 μ μ μ 4.0 mA 8.0 mA input leakage GND current ...
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... NXP Semiconductors 11.1 Transfer characteristics Table 8. Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Symbol Parameter Conditions 74AHC3G14 V positive-going threshold V CC voltage negative-going V T− CC threshold V CC voltage hysteresis voltage 74AHCT3G14 V positive-going threshold V CC voltage V negative-going V T− ...
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... NXP Semiconductors Table 9. Dynamic characteristics ≤ GND = 3.0 ns; for test circuit see r f Symbol Parameter Conditions 74AHCT3G14 t propagation nA to nY; pd delay power per buffer; PD dissipation pF capacitance V = GND [ the same as t and PLH PHL [2] Typical values are measured at V [3] Typical values are measured at V ...
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... NXP Semiconductors 13.1 Transfer characteristic waveforms T− Fig 9. Transfer characteristic 1 (mA Fig 11. Typical 74AHC3G14 transfer characteristics 74AHC_AHCT3G14 Product data sheet 74AHC3G14; 74AHCT3G14 mna026 Fig 10. The definitions of V mna401 (V) I Fig 12. Typical 74AHC3G14 transfer characteristics All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors Fig 13. Typical 74AHC3G14 transfer characteristics (mA 4 Fig 14. Typical 74AHCT3G14 transfer characteristics 14. Application information The slow input rise and fall times cause additional power dissipation, which can be calculated using the following formula add P = additional power dissipation (μW); add f = input frequency (MHz); ...
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... NXP Semiconductors t = input fall time (ns ΔI CC(AV) ΔI CC(AV) and Figure For 74AHC3G14 and 74AHCT3G14 used in relaxation oscillator circuit, see Note to the application information: 1. All values given are typical unless otherwise specified. 200 ΔI CC(AV) (μA) 150 100 2.0 Linear change of V between 0 ...
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... NXP Semiconductors 15. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.00 0.75 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...
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... NXP Semiconductors VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...
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... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...
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... NXP Semiconductors XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 0.5 mm terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.35 2.1 mm 0.5 0.00 0.15 1.9 OUTLINE VERSION IEC SOT996 Fig 22. Package outline SOT996-2 (XSON8U) ...
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... NXP Semiconductors 16. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 17. Revision history Table 12. Revision history Document ID Release date 74AHC_AHCT3G14 v.6 20101118 • ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 19. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AHC_AHCT3G14 Product data sheet 74AHC3G14 ...
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... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Functional description . . . . . . . . . . . . . . . . . . . 4 9 Limiting values Recommended operating conditions Static characteristics 11.1 Transfer characteristics . . . . . . . . . . . . . . . . . . 6 12 Dynamic characteristics ...