NTB75N06T4 ONSEMI [ON Semiconductor], NTB75N06T4 Datasheet

NTB75N06T4

Manufacturer Part Number

NTB75N06T4

Description

Power MOSFET

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.NTB75N06T4.pdf (8 pages)

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NTP75N06, NTB75N06

Power MOSFET

75 Amps, 60 Volts, N−Channel

TO−220 and D

power supplies, converters and power motor controls and bridge

circuits.

Features

Typical Applications

MAXIMUM RATINGS

August, 2004 − Rev. 2

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Designed for low voltage, high speed switching applications in

Pb−Free Packages are Available

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

Semiconductor Components Industries, LLC, 2004

Derate above 25 C

Energy − Starting T

Purposes, 1/8 from case for 10 seconds

L(pk)

− Continuous

− Non−Repetitive (t

− Continuous @ T

− Single Pulse (t

− Junction−to−Case

− Junction−to−Ambient

= 50 Vdc, V

= 75 A, V

Rating

= 60 Vdc)

= 10 Vdc, L = 0.3 mH

= 25 C

v10 ms)

PAK

v10 ms)

= 25 C

= 100 C

= 25 C unless otherwise noted)

= 10 MW)

= 25 C

Symbol

DGR

, T

DSS

qJC

qJA

stg

−55 to

Value

+175

"20

"30

62.5

225

214

844

260

1.4

2.4

0.7

W/ C

Unit

Vdc

Adc

Apk

C/W

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

75 AMPERES, 60 VOLTS

75N06

ORDERING INFORMATION

http://onsemi.com

DS(on)

CASE 221A

CASE 418B

STYLE 5

TO−220

N−Channel

STYLE 2

= Device Code

= Assembly Location

= Year

= Work Week

PAK

= 9.5 mW

Publication Order Number:

Gate

DIAGRAMS

MARKING

AYWW

Drain

AYWW

Drain

75N06

Drain

NTP75N06/D

Source

Related parts for NTB75N06T4

NTB75N06T4 Summary of contents

Page 1

NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel 2 TO−220 and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb−Free Packages are Available Typical Applications ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

6.5 V 140 GS GS 120 100 DRAIN−TO−SOURCE ...

Page 4

8000 C iss 6000 C rss C iss 4000 C oss 2000 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V) Figure ...

Page 5

... SINGLE PULSE 0.01 0.00001 0.0001 ORDERING INFORMATION Device NTP75N06 NTP75N06G NTB75N06 NTB75N06G NTB75N06T4 NTB75N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP75N06, NTB75N06 P (pk DUTY CYCLE ...

Page 6

NTP75N06, NTB75N06 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI −T− PLANE Y14.5M, ...

Page 7

−T− SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE M F VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download ...

Page 8

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for ...

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