NTB75N06T4 ONSEMI [ON Semiconductor], NTB75N06T4 Datasheet - Page 3

• Manufacturer Part Number: NTB75N06T4
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

160
140
120
100
0.015
0.013
0.011
0.009
0.007
0.005
0.003
1.8
1.6
1.4
1.2
0.8
0.6
80
60
40
20
0
2
1
−50
0
0
I
V
V
D
GS
GS
V
Figure 3. On−Resistance vs. Gate−to−Source
= 37.5 A
−25
Figure 5. On−Resistance Variation with
GS
= 10 V
Figure 1. On−Region Characteristics
= 10 V
V
20
= 10 V
DS
T
, DRAIN−TO−SOURCE VOLTAGE (V)
J
0
, JUNCTION TEMPERATURE ( C)
1
40
I
D
, DRAIN CURRENT (AMPS)
25
Temperature
V
60
V
GS
GS
50
Voltage
= 9 V
T
= 8 V
T
T
V
2
J
J
J
GS
80
= −55 C
= 100 C
= 25 C
V
75
GS
= 7 V
= 6.5 V
100
100
V
V
3
125
V
V
120
GS
GS
NTP75N06, NTB75N06
GS
GS
= 5.5 V
= 4.5 V
= 6 V
= 5 V
150
http://onsemi.com
140
175
4
160
3
10000
0.015
0.013
0.009
0.007
0.005
0.003
0.011
1000
160
140
120
100
100
80
60
40
20
10
0
2.5
0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
V
DS
GS
GS
T
3
w 10 V
= 0 V
20
J
= 15 V
V
V
= 100 C
10
Figure 2. Transfer Characteristics
DS
GS
3.5
, DRAIN−TO−SOURCE VOLTAGE (V)
T
, GATE−TO−SOURCE VOLTAGE (V)
J
I
40
D
= 25 C
, DRAIN CURRENT (AMPS)
20
4
60
Gate Voltage
vs. Voltage
T
T
T
4.5
J
J
J
= 150 C
= 125 C
= 100 C
30
T
80
T
T
T
J
J
J
J
= −55 C
5
= 100 C
= −55 C
= 25 C
100
5.5
40
120
6
50
140
6.5
160
60
7