pbss305nz NXP Semiconductors, pbss305nz Datasheet - Page 6

• Manufacturer Part Number: pbss305nz
• Description: Pbss305nz 80 V, 5.1 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
PBSS305NZ_1
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 01 — 19 September 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.1 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 80 V; I
= 80 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
B
B
B
B
B
B
B
B
B
B
80 V, 5.1 A NPN low V
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 80 mA
= 200 mA
= 80 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
= 50 mA
= 255 mA
= 0 A
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
= 0 A
= 0 A;
= i
C
= 100 mA;
= 3 A;
e
= 0 A;
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
250
180
90
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS305NZ
CEsat
Typ
-
-
-
470
420
280
140
80
25
50
85
105
160
150
225
190
40
56
0.82
0.94
0.77
15
200
215
310
245
555
110
30
(BISS) transistor
Max
100
50
100
-
-
-
-
-
40
70
120
150
225
210
340
270
56
85
0.9
1.05
0.85
-
-
-
-
-
-
-
50
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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A