mw4ic2230n Freescale Semiconductor, Inc, mw4ic2230n Datasheet

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mw4ic2230n

Manufacturer Part Number
mw4ic2230n
Description
Rf Ldmos Wideband Integrated Power Amplifiers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
mw4ic2230nBR1
Manufacturer:
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Part Number:
mw4ic2230nBR1
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
• Typical Single - Carrier W - CDMA Performance:
Driver Application
• Typical Single - Carrier W - CDMA Performance:
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
• On - Chip Current Mirror g
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
The MW4IC2230N wideband integrated circuit is designed for W - CDMA
60 mA, I
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
60 mA, I
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
P
with Enable/Disable Function
Select Documentation/Application Notes - AN1987.
out
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
.
V
V
V
V
V
V
V
RF
RD1
RG1
GS1
GS2
GS3
DS2
DS1
in
DQ2
DQ2
= 350 mA, P
= 350 mA, P
Figure 1. Functional Block Diagram
out
out
m
Reference FET for Self Biasing Application
Temperature Compensation
= 5 Watts Avg., f = 2140 MHz, Channel
= 0.4 Watts Avg., f = 2140 MHz, Channel
Quiescent Current
3 Stages I
V
V
C
DD
DD
= 28 Volts, I
= 28 Volts, I
DQ1
DQ1
V
=
=
DS3
(1)
/RF
out
INTEGRATED POWER AMPLIFIERS
MW4IC2230NBR1 MW4IC2230GNBR1
Document Number: MW4IC2230N
MW4IC2230GNBR1
Note: Exposed backside flag is source
MW4IC2230NBR1
2110 - 2170 MHz, 30 W, 28 V
V
V
V
GND
V
V
V
V
GND
Figure 2. Pin Connections
RF
RF LDMOS WIDEBAND
TO - 272 WB - 16 GULL
GS1
GS2
GS3
DS2
RD1
RG1
DS1
MW4IC2230GNBR1
in
terminal for transistors.
CASE 1329A - 03
SINGLE W - CDMA
PLASTIC
10
MW4IC2230NBR1
11
1
2
3
4
5
6
7
8
9
TO - 272 WB - 16
CASE 1329 - 09
(Top View)
PLASTIC
16
15
14
13
12
Rev. 6, 5/2006
GND
V
RF
GND
DS3/
out
1

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mw4ic2230n Summary of contents

Page 1

... Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage ( Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA ...

Page 2

... Part - to - Part Phase Variation 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. MW4IC2230NBR1 MW4IC2230GNBR1 2 Stage 1 Stage 2 Stage 3 ...

Page 3

... Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 245 mA 2112.5 MHz 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz, DQ3 G ps IM3 ACPR IRL Min Typ Max Unit = 28 Vdc, DD — 31.5 — dB — — dBc — — dBc — — dB MW4IC2230NBR1 MW4IC2230GNBR1 3 ...

Page 4

... Microstrip Z4 0.350″ x 0.240″ Microstrip Z5 0.420″ x 0.090″ Microstrip Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values Part C1, C2, C3 μ Tantalum Capacitors C5, C6, C7, C8, C12 8.2 pF 100B Chip Capacitors C9, C10 1 ...

Page 5

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor ...

Page 6

... out 29 I DQ1 2−Carrier W−CDMA 28 27 2050 Figure Carrier W - CDMA Wideband Performance MW4IC2230NBR1 MW4IC2230GNBR1 6 TYPICAL CHARACTERISTICS = 28 Vdc = 26 dBm (Avg mA 350 mA 265 mA DQ2 DQ3 2100 2150 2200 f, FREQUENCY (MHz) Performance @ dBm out 0 − ...

Page 7

... Divide 2 MTTF factor by I for MTTF in a particular application Vdc, Small Signal mA 350 mA 265 mA DQ1 DQ2 DQ3 2000 2050 2100 2150 2200 2250 f, FREQUENCY (MHz) Figure 10. Delay versus Frequency 170 180 190 2 MW4IC2230NBR1 MW4IC2230GNBR1 2300 7 ...

Page 8

... MHz f = 2050 MHz MHz 2050 2110 2140 2170 2230 load Figure 12. Series Equivalent Input and Load Impedance MW4IC2230NBR1 MW4IC2230GNBR1 2050 MHz f = 2230 MHz = 50 Ω mA 350 mA 265 mA, P DQ1 DQ2 DQ3 Z Z ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MW4IC2230NBR1 MW4IC2230GNBR1 9 ...

Page 10

... MW4IC2230NBR1 MW4IC2230GNBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 11 ...

Page 12

... MW4IC2230NBR1 MW4IC2230GNBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 13 ...

Page 14

... MW4IC2230NBR1 MW4IC2230GNBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 15 ...

Page 16

... RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MW4IC2230NBR1 MW4IC2230GNBR1 Document Number: MW4IC2230N Rev. 6, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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