mw4ic2230n Freescale Semiconductor, Inc, mw4ic2230n Datasheet - Page 8

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mw4ic2230n

Manufacturer Part Number
mw4ic2230n
Description
Rf Ldmos Wideband Integrated Power Amplifiers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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8
MW4IC2230NBR1 MW4IC2230GNBR1
f = 2050 MHz
f = 2230 MHz
Z
load
Z
Z
in
load
Figure 12. Series Equivalent Input and Load Impedance
V
*
DD
2050
2140
2170
2230
2110
MHz
f
= 28 V, I
= Device input impedance as measured from
= Test circuit impedance as measured
gate to ground.
from drain to ground.
DQ1
Z
Z
o
in
= 50 Ω
= 60 mA, I
42.18 + j1.49
41.06 - j1.30
40.49 - j2.42
40.05 - j3.45
39.29 - j6.31
Device
Under
Test
Z
Ω
DQ2
in
= 350 mA, I
f = 2050 MHz
f = 2230 MHz
Z
Z
load
in
*
DQ3
= 265 mA, P
Output
Matching
Network
8.52 - j0.46
8.58 - j0.20
8.63 - j0.09
8.69 - j0.01
8.81 + j0.04
Z
load
Ω
out
= 26 dBm
Freescale Semiconductor
RF Device Data

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