mw4ic2230n Freescale Semiconductor, Inc, mw4ic2230n Datasheet - Page 6

• Manufacturer Part Number: mw4ic2230n
• Description: Rf Ldmos Wideband Integrated Power Amplifiers
• Manufacturer: Freescale Semiconductor, Inc

6
MW4IC2230NBR1 MW4IC2230GNBR1
32
31
30
29
28
27
26
2050
V
P
I
1−Carrier W−CDMA
Figure 6. Single - Carrier W - CDMA Wideband
DQ1
DD
out
= 28 Vdc
= 31 dBm (Avg.)
= 60 mA, I
Performance @ P
2100
DQ2
= 350 mA, I
f, FREQUENCY (MHz)
DQ3
33
32
31
30
29
28
27
Figure 8. 2 - Carrier W - CDMA Wideband Performance
2150
32
31
30
29
28
27
26
= 265 mA
2050
out
2050
V
P
I
2−Carrier W−CDMA
DQ1
V
P
I
1−Carrier W−CDMA
DD
out
Figure 5. Single - Carrier W - CDMA Wideband
= 31 dBm
DQ1
DD
out
= 28 Vdc
= 26 dBm (Avg.)
= 60 mA, I
= 28 Vdc
= 26 dBm (Avg.)
= 60 mA, I
Performance @ P
TYPICAL CHARACTERISTICS
2200
2100
DQ2
2100
DQ2
= 400 mA, I
G
IRL
ACPR
f, FREQUENCY (MHz)
= 350 mA, I
f, FREQUENCY (MHz)
ps
0
−10
−20
−30
−40
−50
−60
DQ3
DQ3
2150
= 245 mA
2150
= 265 mA
out
= 26 dBm
−40
−45
−50
−55
−60
0.1
V
I
f = 2140 MHz, 1−Carrier W−CDMA
DQ1
DD
2200
Figure 7. Adjacent Channel Power Ratio
2200
= 28 Vdc
= 60 mA, I
G
IRL
IM3
ACPR
G
IRL
ACPR
ps
ps
P
out
DQ2
, OUTPUT POWER (WATTS) AVG.
versus Output Power
0
−10
−20
−30
−40
−50
−60
0
−10
−20
−30
−40
−50
−60
= 350 mA, I
DQ3
1
= 265 mA
Freescale Semiconductor
RF Device Data
T
C
= 85_C
25_C
−30_C
10