BU323Z_09

Manufacturer Part NumberBU323Z_09
DescriptionNPN Silicon Power Darlington
ManufacturerONSEMI [ON Semiconductor]
BU323Z_09 datasheet
 


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BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
Integrated High−Voltage Active Clamp
Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
Design Guarantees Operation in SOA at All Times
Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
Base Current
− Continuous
− Peak
Total Power Dissipation @ T
= 25_C
C
Derate above 25_C
Operating and Storage Junction Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 14
10 AMPERE DARLINGTON
Symbol
Max
Unit
V
350
Vdc
CEO
V
6.0
Vdc
EBO
I
10
Adc
C
I
20
CM
I
3.0
Adc
B
I
6.0
BM
P
150
W
D
1.0
W/_C
T
, T
–65 to
_C
J
stg
+175
1
2
Symbol
Max
Unit
R
1.0
_C/W
qJC
T
260
_C
L
Device
BU323Z
BU323ZG
1
http://onsemi.com
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
360 V
CLAMP
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
4
DIAGRAM
SOT−93
AYWW
CASE 340D
BU323ZG
STYLE 1
3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
BU323Z
= Device Code
ORDERING INFORMATION
Package
Shipping
SOT−93
30 Units / Rail
SOT−93
30 Units / Rail
(Pb−Free)
Publication Order Number:
BU323Z/D

BU323Z_09 Summary of contents

  • Page 1

    BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...

  • Page 3

    6.5 A NOM Output transistor turns on: I High Voltage Circuit turns on 100 μA Avalanche diode turns on 250 V 300 V Icer Leakage Current Figure 1. ...

  • Page 4

    CPEAK ( CPEAK ( CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under ...

  • Page 5

    T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...

  • Page 6

    Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no ...