BU323Z_09 ONSEMI [ON Semiconductor], BU323Z_09 Datasheet
BU323Z_09
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BU323Z_09 Summary of contents
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BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...
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6.5 A NOM Output transistor turns on: I High Voltage Circuit turns on 100 μA Avalanche diode turns on 250 V 300 V Icer Leakage Current Figure 1. ...
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CPEAK ( CPEAK ( CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under ...
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T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...
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