BU323Z_09 ONSEMI [ON Semiconductor], BU323Z_09 Datasheet - Page 4

• Manufacturer Part Number: BU323Z_09
• Description: NPN Silicon Power Darlington
• Manufacturer: ONSEMI [ON Semiconductor]

I
I
I
I
CPEAK
CPEAK
CPEAK
CPEAK
I
I
I
I
C
C
C
C
(a)
(b)
(c)
(d)
Figure 4. Energy Test Criteria for BU323Z
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
V
V
V
V
HIGH
LOW
HIGH
LOW
HIGH
LOW
HIGH
LOW
GATE
GATE
GATE
GATE
MIN
MIN
MIN
MIN
http://onsemi.com
V
V
V
V
CE
CE
CE
CE
4
device can sustain, under given DC biases (I
R
gram, Figure 2.
load and I
the shaded area and greater than the V
Figure 4a.
(minimum limit) at any point along the V
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
voltage is less than the V
BE
The shaded area represents the amount of energy the
The transistor PASSES the Energy test if, for the inductive
The transistor FAILS if the V
The transistor FAILS if its Collector/Emitter breakdown
), without an external clamp; see the test schematic dia-
CPEAK
/I
B
/V
BE(off)
GATE
biases, the V
value, Figure 4d.
CE
is less than the V
GATE
CE
minimum limit,
remains outside
CE
C
/I
/I
C
B
/V
curve as
BE(off)
GATE
/