CY8C38_1105 CYPRESS [Cypress Semiconductor], CY8C38_1105 Datasheet - Page 105

• Manufacturer Part Number: CY8C38_1105
• Description: Programmable System-on-Chip (PSoC) Multiply and divide instructions
• Manufacturer: CYPRESS [Cypress Semiconductor]

11.7 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.7.1 Flash
Table 11-58. Flash DC Specifications
Table 11-59. Flash AC Specifications
Document Number: 001-11729 Rev. *S
T
T
T
Parameter
Parameter
WRITE
ERASE
BULK
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time,
including JTAG or SWD, and other
overhead
Flash data retention time, retention
period measured from last erase
cycle
Description
Description
A
≤ 85 °C and T
Figure 11-66. Clock to Output Performance
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
A
DDD
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
J
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
pin
Conditions
Conditions
1.71
Min
Min
20
10
–
–
–
–
–
–
PSoC
Typ
Typ
15
10
5
–
–
–
–
–
–
®
3: CY8C38 Family
Max
Max
5.5
20
13
35
15
7
5
–
–
Data Sheet
Page 105 of 130
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