X28HC256D-90 INTERSIL [Intersil Corporation], X28HC256D-90 Datasheet

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X28HC256D-90

Manufacturer Part Number
X28HC256D-90
Description
5V, Byte Alterable EEPROM
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

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X28HC256D-90
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5V, Byte Alterable EEPROM
The X28HC256 is a second generation high performance
CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s
proprietary, textured poly floating gate technology, providing
a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation,
effectively providing a 24µs/byte write cycle, and enabling
the entire memory to be typically rewritten in less than 0.8
seconds. The X28HC256 also features DATA Polling and
Toggle Bit Polling, two methods of providing early end of
write detection. The X28HC256 also supports the JEDEC
standard Software Data Protection feature for protecting
against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum
1,000,000 write cycles per byte and an inherent data
retention of 100 years.
Block Diagram
®
1
A
ADDRESS
INPUTS
0
TO A
Data Sheet
14
V
V
OE
WE
CE
CC
SS
LATCHES AND
LATCHES AND
1-888-INTERSIL or 1-888-468-3774
X BUFFERS
LOGIC AND
Y BUFFERS
DECODER
CONTROL
DECODER
TIMING
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Access time: 70ns
• Simple byte and page write
• Low power CMOS
• Software data protection
• High speed page write capability
• Highly reliable Direct Write
• Early end of write detection
• Pb-free plus anneal available (RoHS compliant)
- Single 5V supply
- No external high voltages or V
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
- Active: 60mA
- Standby: 500µA
- Protects data against system level inadvertent writes
- Endurance: 1,000,000 cycles
- Data retention: 100 years
- DATA polling
- Toggle bit polling
DATA INPUTS/OUTPUTS
All other trademarks mentioned are the property of their respective owners.
|
AND LATCHES
May 7, 2007
Copyright Intersil Americas Inc. 2005, 2006, 2007. All Rights Reserved
I/O BUFFERS
Intersil (and design) is a registered trademark of Intersil Americas Inc.
I/O
EEPROM
256kBIT
ARRAY
0
TO I/O
7
cell
P-P
256k, 32k x 8-Bit
X28HC256
control circuits
FN8108.2

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X28HC256D-90 Summary of contents

Page 1

... The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection ...

Page 2

... Ordering Information PART NUMBER PART MARKING X28HC256DI-15 X28HC256DI-15 RR X28HC256DM-15 X28HC256DM-15 RR X28HC256DMB-15 C X28HC256DMB-15 X28HC256EMB-15 C X28HC256EMB-15 X28HC256FMB-15 C X28HC256FMB-15 X28HC256J-15*, ** X28HC256J-15 RR X28HC256JZ-15* (Note) X28HC256J-15 ZRR X28HC256JI-15*, ** X28HC256JI-15 RR X28HC256JIZ-15* (Note) X28HC256JI-15 ZRR X28HC256JM-15* X28HC256JM-15 RR X28HC256KI-15 X28HC256KI-15 RR X28HC256KM-15 X28HC256KM-15 RR X28HC256KMB-15 C X28HC256KMB-15 X28HC256P-15 X28HC256P-15 RR X28HC256PZ-15 (Note) X28HC256P-15 RRZ ...

Page 3

... PART NUMBER PART MARKING X28HC256PIZ-12 (Note) X28HC256PI-12 RRZ X28HC256S-12* X28HC256S-12 RR X28HC256SZ-12 (Note) X28HC256S-12 RRZ X28HC256SI-12* X28HC256SI-12 RR X28HC256SIZ-12 (Note) X28HC256SI-12 RRZ X28HC256SM-12*, ** X28HC256SM-12 RR X28HC256D-90 X28HC256D-90 RR X28HC256DI-90 X28HC256DI-90 RR X28HC256DM-90 X28HC256DM-90 RR X28HC256DMB-90 C X28HC256DMB-90 X28HC256EM-90 X28HC256EM-90 RR X28HC256EMB-90 C X28HC256EMB-90 X28HC256FI-90 X28HC256FI-90 RR X28HC256FM-90 X28HC256FM-90 RR X28HC256FMB-90 C X28HC256FMB-90 ...

Page 4

... Pin Descriptions Addresses ( The Address inputs select an 8-bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable input must be LOW to enable all read/write operations. When CE is HIGH, power consumption is reduced. Output Enable (OE) The Output Enable input controls the data output buffers, and is used to initiate read operations ...

Page 5

... Page Write Operation The page write feature of the X28HC256 allows the entire memory to be written in typically 0.8 seconds. Page write allows up to one hundred twenty-eight bytes of data to be consecutively written to the X28HC256, prior to the commencement of the internal programming cycle. The host ...

Page 6

DATA Polling I/O 7 LAST WRITE I WRITE DATA WRITES COMPLETE? YES SAVE LAST DATA AND ADDRESS READ LAST ADDRESS COMPARE? YES X28HC256 READY ...

Page 7

The Toggle Bit I/O 6 LAST WRITE I ¬ LAST WRITE YES LOAD ACCUM FROM ADDR n COMPARE ACCUM WITH ADDR n NO COMPARE OK? YES X28C256 READY FIGURE 5. TOGGLE BIT SOFTWARE FLOW The ...

Page 8

Software Algorithm Selecting the software data protection mode requires the host system to precede data write operations by a series of three write operations to three specific addresses. Refer to Figure 6 and 7 for the sequence. The three-byte sequence ...

Page 9

... Because the X28HC256 has two power modes, standby and active, proper decoupling of the memory array is of prime concern. Enabling CE will cause transient current spikes. The magnitude of these spikes is dependent on the output capacitive loading of the l/Os ...

Page 10

Absolute Maximum Ratings Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C X28HC256 . . . . . . . . . ...

Page 11

Capacitance +25° 1MHz, V SYMBOL C (Note 9) Input/output capacitance I/O C (Note 9) Input capacitance IN Endurance and Data Retention PARAMETER Endurance Data retention AC Conditions of Test Input pulse levels Input rise and ...

Page 12

AC Electrical Specifications Over Recommended Operating Conditions, Unless Otherwise Specified. PARAMETER Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE LOW to Active Output OE LOW to Active Output CE HIGH to High Z ...

Page 13

Write Cycle Limits PARAMETER Write Cycle Time Address Setup Time Address Hold Time Write Setup Time Write Hold Time CE Pulse Width OE HIGH Setup Time OE HIGH Hold Time WE Pulse Width WE HIGH Recovery (page write only) Data ...

Page 14

... Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation. 10. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the controlled write cycle timing ...

Page 15

DATA Polling Timing Diagram (Note 11) ADDRESS OEH I Toggle Bit Timing Diagram (Note 11 OEH OE HIGH Z I I/O 6 NOTE: ...

Page 16

Ceramic Dual-In-Line Frit Seal Packages (CERDIP) -A- -D- E -B- bbb BASE Q PLANE -C- SEATING PLANE aaa ccc ...

Page 17

Plastic Leaded Chip Carrier Packages (PLCC) 0.042 (1.07) PIN (1) 0.056 (1.42) 0.042 (1.07) IDENTIFIER 0.050 (1.27) TP 0.048 (1.22 0.020 (0.51) MAX 3 PLCS 0.050 (1.27) MIN 0.025 (0.64) MIN VIEW ...

Page 18

Ceramic Pin Grid Array Package (CPGA) Typ. 0.100 (2.54) All Leads 0.660 (16.76) 0.640 (16.26) NOTE: All dimensions in inches (in parentheses in millimeters). 18 X28HC256 G28.550x650A 28 LEAD CERAMIC PIN GRID ARRAY PACKAGE ...

Page 19

Small Outline Package Family (SO PIN #1 I.D. MARK 0.010 SEATING PLANE 0.004 C 0.010 MDP0027 SMALL OUTLINE PACKAGE FAMILY (SO) SYMBOL SO-8 SO-14 ...

Page 20

Dual-In-Line Plastic Packages (PDIP INDEX N/2 AREA -B- -A- D BASE PLANE -C- SEATING PLANE 0.010 (0.25 NOTES: 1. Controlling Dimensions: INCH. In case of conflict between ...

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