X28HC256DI-12 INTERSIL [Intersil Corporation], X28HC256DI-12 Datasheet

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X28HC256DI-12

Manufacturer Part Number
X28HC256DI-12
Description
5 Volt, Byte Alterable EEPROM
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

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Part Number:
X28HC256DI-12
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X28HC256DI-12
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5 Volt, Byte Alterable EEPROM
FEATURES
• Access time: 70ns
• Simple byte and page write
• Low power CMOS
• Software data protection
• High speed page write capability
• Highly reliable Direct Write
• Early end of write detection
• Pb-free plus anneal available (RoHS compliant)
BLOCK DIAGRAM
—Single 5V supply
—No external high voltages or V
—Self-timed
—No erase before write
—No complex programming algorithms
—No overerase problem
—Active: 60mA
—Standby: 500µA
—Protects data against system level inadvertent
—Endurance: 1,000,000 cycles
—Data retention: 100 years
—DATA polling
—Toggle bit polling
writes
®
1
A
Address
Inputs
0
–A
Data Sheet
14
cell
PP
V
V
OE
WE
CE
CC
SS
control circuits
Latches and
1-888-INTERSIL or 1-888-468-3774
Latches and
DECODER
Logic and
X Buffers
Decoder
Y Buffers
Control
Timing
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
DESCRIPTION
The X28HC256 is a second generation high perfor-
mance CMOS 32K x 8 EEPROM. It is fabricated with
Intersil’s proprietary, textured poly floating gate tech-
nology, providing a highly reliable 5 Volt only nonvola-
tile memory.
The X28HC256 supports a 128-byte page write opera-
tion, effectively providing a 24µs/byte write cycle, and
enabling the entire memory to be typically rewritten in
less than 0.8 seconds. The X28HC256 also features
DATA Polling and Toggle Bit Polling, two methods of
providing early end of write detection. The X28HC256
also supports the JEDEC standard Software Data Pro-
tection feature for protecting against inadvertent writes
during power-up and power-down.
Endurance for the X28HC256 is specified as a mini-
mum 1,000,000 write cycles per byte and an inherent
data retention of 100 years.
All other trademarks mentioned are the property of their respective owners.
Data Inputs/Outputs
May 17, 2006
|
and Latches
Intersil (and design) is a registered trademark of Intersil Americas Inc.
I/O Buffers
EEPROM
I/O
256Kbit
Array
0
Copyright Intersil Americas Inc. 2005-2006. All Rights Reserved
–I/O
7
256K, 32K x 8 Bit
X28HC256
FN8108.1

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X28HC256DI-12 Summary of contents

Page 1

... PP The X28HC256 supports a 128-byte page write opera- tion, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection. The X28HC256 ...

Page 2

... X28HC256KMB-15 X28HC256KMB-15 X28HC256P-15 X28HC256P-15 X28HC256PZ-15 (Note) X28HC256P-15 Z X28HC256PI-15 X28HC256PI-15 X28HC256PIZ-15 (Note) X28HC256PI-15 Z X28HC256PM-15 X28HC256PM-15 X28HC256SI-15* X28HC256SI-15 X28HC256SM-15 X28HC256SM-15 X28HC256D-12 X28HC256D-12 X28HC256DI-12 X28HC256DI-12 X28HC256DM-12 X28HC256DM-12 X28HC256DMB-12 X28HC256DMB-12 X28HC256EI-12 X28HC256EI-12 X28HC256EM-12 X28HC256EM-12 X28HC256EMB-12 X28HC256EMB-12 X28HC256FMB-12 X28HC256FMB-12 X28HC256J-12* X28HC256J-12 X28HC256JZ-12* (Note) X28HC256J-12 Z X28HC256JI-12* X28HC256JI-12 ...

Page 3

... Ordering Information (Continued) PART NUMBER PART MARKING X28HC256S-12* X28HC256S-12 X28HC256SZ-12 (Note) X28HC256S-12 Z X28HC256SI-12* X28HC256SI-12 X28HC256SIZ-12 (Note) X28HC256SI-12 Z X28HC256SM-12* X28HC256SM-12 X28HC256D-90 X28HC256D-90 X28HC256DI-90 X28HC256DI-90 X28HC256DM-90 X28HC256DM-90 X28HC256DMB-90 X28HC256DMB-90 X28HC256EM-90 X28HC256EM-90 X28HC256EMB-90 X28HC256EMB-90 X28HC256FI-90 X28HC256FI-90 X28HC256FM-90 X28HC256FM-90 X28HC256FMB-90 X28HC256FMB-90 X28HC256J-90* X28HC256J-90 X28HC256JZ-90* (Note) ...

Page 4

... PIN DESCRIPTIONS Addresses ( The Address inputs select an 8-bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable input must be LOW to enable all read/write operations. When CE is HIGH, power con- sumption is reduced. Output Enable (OE) The Output Enable input controls the data output buff- ers, and is used to initiate read operations ...

Page 5

... Page Write Operation The page write feature of the X28HC256 allows the entire memory to be written in typically 0.8 seconds. Page write allows up to one hundred twenty-eight bytes of data to be consecutively written to the X28HC256, prior to the commencement of the internal programming cycle ...

Page 6

DATA POLLING I/O 7 Figure 2. DATA Polling Bus Sequence Last Write HIGH Z I – Figure 3. DATA Polling Software Flow Write Data Writes Complete? Yes Save Last ...

Page 7

THE TOGGLE BIT I/O 6 Figure 4. Toggle Bit Bus Sequence Last Write I Figure 5. Toggle Bit Software Flow ¬ Last Write Yes Load Accum From Addr n Compare Accum with Addr n ...

Page 8

SOFTWARE ALGORITHM Selecting the software data protection mode requires the host system to precede data write operations by a series of three write operations to three specific addresses. Refer to Figure 6 and 7 for the sequence. SOFTWARE DATA PROTECTION ...

Page 9

... SYSTEM CONSIDERATIONS Because the X28HC256 is frequently used in large memory arrays provided with a two line control architecture for both read and write operations. Proper usage can provide the lowest possible power dissipa- tion, and eliminate the possibility of contention where multiple I/O pins share the same bus ...

Page 10

ABSOLUTE MAXIMUM RATINGS Temperature under bias X28HC256 ....................................... -10°C to +85°C X28HC256I, X28HC256M .............. -65°C to +135°C Storage temperature ......................... -65°C to +150°C Voltage on any pin with respect to V ........................................ -1V to +7V SS D.C. output current ............................................. ...

Page 11

CAPACITANCE T = +25° 1MHz Symbol (9) C Input/output capacitance I/O (9) C Input capacitance IN ENDURANCE AND DATA RETENTION Parameter Endurance Data retention A.C. CONDITIONS OF TEST Input pulse levels Input rise and fall times ...

Page 12

A.C. CHARACTERISTICS (Over the recommended operating conditions, unless otherwise specified.) Read Cycle Limits Symbol Parameter (5) t Read cycle time RC (5) t Chip enable access time CE (5) t Address access time AA t Output enable access time OE ...

Page 13

Write Cycle Limits Symbol Parameter (7) t Write cycle time WC t Address setup time AS t Address hold time AH t Write setup time CS t Write hold time pulse width HIGH setup ...

Page 14

... Notes: (9) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation. ...

Page 15

DATA Polling Timing Diagram Address OEH I (11) Toggle Bit Timing Diagram OEH OE HIGH Z I I/O 6 Note: (11)Polling operations ...

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