E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 29

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

5.4
V
3/5# = Pin Set High for 3.3V Operations
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
2. I
3. Block erases, programs and lock block operations are inhibited when V
4. Automatic Power Savings (APS) reduces I
5. CMOS Inputs are either V
6. Sampled, but not 100% tested. Guaranteed by design.
CC
Symbol
V
V
V
V
currents are valid for all product versions (package and speeds).
I
between V
PPLK
PPH1
PPH2
LKO
CCES
CCES
= 3.3V ± 5%, T
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
and I
DC Characteristics
CCR
PPLK
V
Erase/Program
Lock Voltage
V
Program/Erase
Operations
V
Program/Erase
Operations
V
Erase/Program
Lock Voltage
PP
PP
PP
CC
.
(max) and V
Parameter
during
during
A
= 0°C to +70°C
(until publication date)
INTEL CONFIDENTIAL
CC
PPH1
± 0.2V or GND ± 0.2V. TTL Inputs are either V
(min), between V
(Continued)
Notes
3,6
4/15/97 9:41 AM
3
3
CCR
to 3 mA typical in static operation.
PPH1
11.4
Min
0.0
4.5
2.0
(max) and V
12.0
Typ
5.0
9053204.DOC
PPH2
CC
Max
12.6
1.5
5.5
(min) and above V
= 3.3V, V
PP
IL
V
Units
PPLK
or V
V
V
V
V
PP
IH
and not guaranteed in the ranges
= 12.0V or 5.0V, T = +25°C. These
.
28F016XS FLASH MEMORY
PPH2
(max).
Test Conditions
29