E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 30

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

28F016XS FLASH MEMORY
5.5
V
3/5# = Pin Set Low for 5.0V Operations
30
CC
I
I
I
I
I
I
Symbol
LI
LO
CCS
CCD
CCR
CCR
= 5.0V ± 5%, T
1
2
DC Characteristics
Input Load Current
Output Leakage
Current
V
Current
V
Down Current
V
V
CC
CC
CC
CC
Parameter
Standby
Deep Power-
Read Current
Read Current
A
= 0°C to +70°C
Notes
1,4,5
1,4,
1,5
5,6
1
1
1
Min
Typ
120
105
70
2
2
Max
± 10
130
175
150
± 1
4
5
Units
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
CE
BYTE#, WP#, 3/5# = V
V
CE
BYTE#, WP#, 3/5# = V
RP# = GND ± 0.2V
BYTE# = V
V
CMOS: CE
4-Location Access
f = 33 MHz, I
V
CMOS: CE
4-Location Access
f = 20 MHz, I
CC
IN
CC
OUT
CC
CC
CC
CC
0
0
0.2V
0.2V or GND ± 0.2V
V
GND ± 0.2V
± 0.2V, BYTE# = GND ±
0.2V or V
Inputs = GND ± 0.2V or
V
Sequence: 3-1-1-1
(clocks)
± 0.2V, BYTE# = GND ±
0.2V, or V
Inputs = GND ± 0.2V or
V
Sequence: 3-1-1-1
(clocks)
= V
#, CE
#, CE
= V
= V
= V
= V
= V
= V
IL
CC
CC
= V
Test Conditions
CC
± 0.2V
± 0.2V
CC
CC
CC
CC
CC
CC
CC
1
1
or GND
#, RP# = V
#, RP# = V
Max
Max
Max
Max
Max
Max
CC
0
0
# ,CE
#, CE
or GND
CC
OUT
OUT
CC
± 0.2V or
± 0.2V,
± 0.2V,
= 0 mA
= 0 mA
1
1
# = GND
# = GND
CC
IH
CC
IH
±
or
±