HCS20HMSR INTERSIL [Intersil Corporation], HCS20HMSR Datasheet

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... C to +125 C Intersil Class S Equivalent o HCS20D/ +25 C Sample Sample o HCS20K/ +25 C Sample Sample o HCS20HMSR +25 C Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 Pinouts 2 /mg -9 Errors/Bit-Day 12 RAD (Si)/ +125 C ...

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Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Data to Output TPHL VCC = 4.5V Data to Output TPLH VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = ...

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TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Noise Immunity FN VCC = 4.5V, VIH = 0.70(VCC), Functional Test VIL = 0.30(VCC), (Note 3) Input to Yn TPHL VCC = 4.5V TPLH VCC = 4.5V NOTES: 1. ...

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CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...

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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

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AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

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Die Characteristics DIE DIMENSIONS mils 2.20mm x 2.24mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...