HCS14HMSR INTERSIL [Intersil Corporation], HCS14HMSR Datasheet

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HCS14HMSR

Manufacturer Part Number
HCS14HMSR
Description
Radiation Hardened HEX Inverting Schmitt Trigger
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD(Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS14MS is a Radiation Hardened HEX Inverting
Schmitt trigger. A high on any input forces the output to a Low
state.
The HCS14MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS14MS is supplied in a 14 lead Ceramic flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).
Ordering Information
HCS14DMSR
HCS14KMSR
HCS14D/
Sample
HCS14K/
Sample
HCS14HMSR
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
RANGE
C to +125
C to +125
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
o
o
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
LEVEL
C to +125
Rads (Si)/s
o
-9
C
14 Lead SBDIP
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
2
/mg
Errors/Bit-Day
PACKAGE
1
Pinouts
Functional Diagram
GND
A1
A2
A3
Y1
Y2
Y3
An
HCS14MS
HEX Inverting Schmitt Trigger
NOTE: L = Logic Level Low,
FLATPACK PACKAGE (FLATPACK)
14 LEAD CERAMIC DUAL-IN-LINE
14 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
INPUTS
H = Logic level High
MIL-STD-1835 CDFP3-F14
A1
Y1
A2
Y2
A3
Y3
MIL-STD-1835 CDIP2-T14
An
H
L
1
2
3
4
5
6
7
TRUTH TABLE
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
Spec Number
14
13
12
11
10
9
8
OUTPUTS
File Number
14
13
12
11
10
9
8
Yn
H
VCC
A6
Y6
A5
Y5
A4
Y4
L
518752
3049.1
Yn
VCC
A6
Y6
A5
Y5
A4
Y4

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HCS14HMSR Summary of contents

Page 1

... C to +125 C Intersil Class S Equivalent o HCS14D/ +25 C Sample Sample o HCS14K/ +25 C Sample Sample o HCS14HMSR +25 C Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 Pinouts 2 /mg -9 Errors/Bit-Day 12 Rads (Si)/ +125 C ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Output TPHL VCC = 4.5V Input to Output TPLH VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = ...

Page 4

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETERS SYMBOL Input Switch Points VT+ VT- VH NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = 50pF, Input ...

Page 5

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note 10 11, 13 STATIC BURN-IN II TEST CONNECTIONS (Note ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL FIGURE 1 AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 All Intersil semiconductor products are ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2,20 x 2.24mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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