HCS151D INTERSIL [Intersil Corporation], HCS151D Datasheet

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HCS151D

Manufacturer Part Number
HCS151D
Description
Radiation Hardened 8-Input Multiplexer
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HCS151D.pdf (9 pages)
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Cosmic Ray Upset Immunity 2 x 10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS151MS is a Radiation Hardened 8-Input
Multiplexer having three binary control inputs (S0, S1, S2)
and an active low enable (E) input. The three binary signals
select one of eight channels. Outputs are both inverting and
non-inverting.
The HCS151MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS151MS is supplied in a 16 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS151DMSR
HCS151KMSR
HCS151D/Sample
HCS151K/Sample
HCS151HMSR
Bit-Day (Typ)
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
-9
o
o
C to +125
C to +125
+25
+25
+25
Error/Gate Day
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
163
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
GND
SCREENING LEVEL
I3
I2
I1
I0
Y
Y
E
HCS151MS
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
I3
I2
I1
I0
MIL-STD-1835 CDFP4-F16
MIL-STD-1835 CDIP2-T16
Y
Y
E
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
Radiation Hardened
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
8-Input Multiplexer
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
Spec Number
VCC
I4
I5
I6
I7
S0
S1
S2
File Number
PACKAGE
VCC
I4
I5
I6
I7
S0
S1
S2
518753
3077.1

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HCS151D Summary of contents

Page 1

... The HCS151MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCS151DMSR HCS151KMSR HCS151D/Sample HCS151K/Sample HCS151HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCS151MS Pinouts ...

Page 2

Functional Diagram VCC 8 GND ...

Page 3

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Y TPHL VCC = 4.5V TPLH Input to Y TPHL VCC = 4.5V TPLH Select to Y TPHL VCC = 4.5V TPLH Select to Y TPHL VCC = 4.5V TPLH ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

Page 9

Die Characteristics DIE DIMENSIONS mils 2.13 x 2.13mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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