HCS160DMSR INTERSIL [Intersil Corporation], HCS160DMSR Datasheet

HCS160DMSR

Manufacturer Part Number

HCS160DMSR

Description

Radiation Hardened BCD Decade Synchronous Counter

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HCS160DMSR.pdf (9 pages)

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September 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset: >10

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

• Military Temperature Range: -55

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

• Input Current Levels Ii

Description

The Intersil HCS160MS is a Radiation Hardened high speed

presettable BCD decade synchronous counter that features an

asynchronous reset and look-ahead carry logic. Counting and

parallel presetting are accomplished synchronously with the low-

to-high transition of the clock. A low level on the synchronous

parallel enable input, SPE, disables counting and allows data at

the preset inputs, P0 - P3, to be loaded into the counter. The

counter is reset by a low on the master reset input, MR. Two count

enables, PE and TE are provided for n-bit cascading. TE also

controls the terminal count output, TC. The terminal count output

indicates a maximum count for one clock pulse and is used to

enable the next cascaded stage to count.

The HCS160MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS160MS is supplied in a 16 lead Ceramic ﬂatpack (K sufﬁx)

or a SBDIP Package (D sufﬁx.)

Ordering Information

HCS160DMSR

HCS160KMSR

HCS160D/Sample

HCS160K/Sample

HCS160HMSR

(Typ)

-Standard Outputs: 10 LSTTL Loads

-Bus Driver Outputs: 15 LSTTL Loads

-VIL = 30% of VCC Max

-VIH = 70% of VCC Min

PART NUMBER

RAD (Si)/s 20ns Pulse

5 A @ VOL, VOH

TEMPERATURE RANGE

C to +125

-55

RAD (Si)/s

C to +125

+25

-9

/mg

Errors/Bit-Day

183

Intersil Class S Equivalent

Sample

Die

BCD Decade Synchronous Counter

SCREENING LEVEL

Pinouts

GND

HCS160MS

MIL-STD-1835 CDFP4-F16, LEAD FINISH C

MIL-STD-1835 CDIP2-T16, LEAD FINISH C

FLATPACK PACKAGE (FLATPACK)

16 LEAD CERAMIC DUAL-IN-LINE

16 LEAD CERAMIC METAL SEAL

METAL SEAL PACKAGE (SBDIP)

GND

TOP VIEW

Radiation Hardened

16 Lead SBDIP

16 Lead Ceramic Flatpack

16 Lead SBDIP

16 Lead Ceramic Flatpack

Die

Spec Number

File Number

PACKAGE

VCC

SPE

518834

2296.2

VCC

SPE

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HCS160DMSR Summary of contents

Page 1

... CMOS/SOS Logic Family. The HCS160MS is supplied lead Ceramic ﬂatpack (K sufﬁ SBDIP Package (D sufﬁx.) Ordering Information PART NUMBER TEMPERATURE RANGE HCS160DMSR HCS160KMSR HCS160D/Sample HCS160K/Sample HCS160HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...

Page 2

Functional Block Diagram P0 3 SPE GND VCC OPERATING MODE MR Reset (Clear) L Parallel Load H H Count H Inhibit ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL TPHL, VCC = 4.5V TPLH TPHL, VCC = 4.5V TPLH TPHL, VCC = 4.5V TPLH TPHL VCC ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Current IOH VCC = 4.5V, VIN = VCC or GND, (Source) VOUT = VCC -0.4V Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 HCS160MS AC Load Circuit TPHL TTHL 80% ...

Page 9

Die Characteristics DIE DIMENSIONS: 104 x 86 mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

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